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参数资料
| 型号： | XP1012-BD-000W |
| 厂商： | MIMIX BROADBAND INC |
| 元件分类： | 放大器 |
| 英文描述： | 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | ROHS COMPLIANT, DIE-6 |
| 文件页数： | 5/6页 |
| 文件大小： | 159K |
| 代理商： | XP1012-BD-000W |
Page 5 of 6
App Note [1] Biasing
- It is recommended to separately bias each stage at Vd(1,2)=5.0V and Id1=Id2=540mA. It is also recommended
to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results.
Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT
is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.5V. Typically the
gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative
gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC
bypass capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or
combination (if gate or drains are tied together) of DC bias pads.
For Individual Stage Bias (Recommended for Saturated Applications) -- Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTFTable (TBD)
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
FITs
E+
MTTF Hours
E+
Rth
C/W
Bias Conditions: Vd1=Vd2=5.0V, Id1=Id2=540 mA
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
37.0-40.0 GHz GaAs MMIC
Power Amplifier
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
April 2007 - Rev 19-Apr-07
P1012-BD
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