参数资料
型号: YG835C03R
元件分类: 整流器
英文描述: 10 A, 30 V, SILICON, RECTIFIER DIODE
封装: SC-67, TO-220F15, 3 PIN
文件页数: 2/3页
文件大小: 46K
代理商: YG835C03R
YG835C03R
(30V / 20A TO-22OF15)
Characteristics
0.01
0.1
1
10
100
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
o C
Tj=150
Tj=125
Tj=100
Tj=25
Forward Characteristic (typ.)
IF
Forward
Current
(A)
VF
Forward Voltage
(V)
0
1020
3040
10
-2
10
-1
10
0
10
1
10
2
10
3
Tj=150
o
C
Tj=25
o
C
Tj=100
o
C
Tj=125
oC
Reverse Characteristic
(typ.)
IR
Reverse
current
(mA)
VR
Reverse Voltage
(V)
012345
6789
10
11
0
1
2
3
4
5
6
7
8
9
10
11
Per 1element
DC
Square wave
λ=180
o
Sine wave
λ=180
o
Square wave
λ=120
o
Square wave
λ=60
o
Forward Power Dissipation
WF
Forward
Power
Dissipation
(W)
Io
Average Forward Current
(A)
360°
Io
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
Reverse Power Dissipation
α=180
o
DC
PR
Reverse
Power
Dissipation
(W)
VR
Reverse Voltage
(V)
360°
VR
0246
8
10 12 14 16 18 20 22 24 26 28 30
50
60
70
80
90
100
110
120
130
140
150
160
λ:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Square wave
λ=120
o
Square wave
λ=60
o
Square wave
λ=180
o
Sine wave
λ=180
o
DC
Current Derating (Io-Tc)
Tc
Case
Temperature
(
o
C)
Io
Average Output Current
(A)
VR=20V
360°
Io
10
100
10
100
1000
Junction Capacitance Characteristic
(typ.)
Cj
Junction
Capacitance
(pF)
VR
Reverse Voltage
(V)
λ
α
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