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参数资料
| 型号： | YG855C12R |
| 厂商： | FUJI ELECTRIC CO LTD |
| 元件分类： | 整流器 |
| 英文描述： | 120 V, SILICON, RECTIFIER DIODE |
| 文件页数： | 4/6页 |
| 文件大小： | 544K |
| 代理商： | YG855C12R |
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YG855C12R
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http://www.fujisemi.com
FUJI Diode
0
5
10
15
20
25
30
60
70
80
90
100
110
120
130
140
150
160
Square wave λ=60°
Square wave λ=120°
Square wave λ=180°
Sine wave λ=180°
Tc
C
as
e
Te
m
pe
ra
tu
re
(°
C
)
Io Average Output Current (A)
λ
:Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
DC
Current Derating (Io-Tc) (max.)
λ
360°
I0
VR=60V
0
1
0
1
0
1
10
100
1000
Junction Capacitance Characteristic (max.)
C
j
Ju
nc
tio
n
C
ap
ac
ita
nc
e
(p
F)
VR Reverse Voltage (V)
0
1
0
1
10
100
Surge Capability (max.)
IF
S
M
Pe
ak
H
al
f-
W
av
e
C
ur
re
nt
(A
)
Number of Cycles at 50Hz
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相关代理商/技术参数 |
参数描述 |
|---|---|
| YG855C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG858C12R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG858C15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:Schottky Barrier Diode |
| YG861S12R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:High Voltage Schottky barrier diode |
| YG861S15R | 制造商:FUJI 制造商全称:Fuji Electric 功能描述:High Voltage Schottky barrier diode |
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