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参数资料
| 型号： | ZHB6790 |
| 厂商： | ZETEX PLC |
| 元件分类： | 功率晶体管 |
| 英文描述： | BIPOLAR TRANSISTOR H-BRIDGE |
| 中文描述： | 2 A, 40 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR |
| 封装： | SM-8, 8 PIN |
| 文件页数： | 7/8页 |
| 文件大小： | 193K |
| 代理商： | ZHB6790 |
ZHB6790
100m
100
1s
100ms
10ms
1ms
100μs
10
DC
10m
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area (Full Copper)
see note below
1
10
100m
1
100m
100
1s
100ms
10ms
1ms
100μs
10
DC
10m
VCE - Collector Emitter Voltage (V)
Safe Operating Area (Minimum Copper)
see note below
1
10
100m
1
ZETEX H Bridge NPN transistors Spice model Last revision 4/7/97
.MODEL H6790N NPN IS =2.505E-12 NF =1.0058 BF =1360 IKF=1.3 VAF=35
+ISE=.24E-12 NE =1.38 NR =1.001 BR =125 IKR=1 VAR=8 ISC=.435E-12
+NC =1.213 RB =.2 RE =.043 RC =.04 CJC=54.3E-12 MJC=.475 VJC=.765
+CJE=247E-12 TF =.851E-9 TR =15.7E-9
*
*
*ZETEX H Bridge PNP transistors Spice model Last revision 4/7/97
.MODEL H6790P PNP IS=1.09684E-12 NF=1.0102 BF=650 IKF=1.7 VAF=23.5
+ISE=9.88593E-14 NE=1.47256 NR=1.00391 BR=270 IKR=0.2 VAR=30
+ISC=5.4933E-14 NC=1.07427 RB=0.055 RE=0.049 RC=0.078 CJC=96E-12
+MJC=0.495 VJC=0.67 CJE=275E-12 TF=0.75E-9 TR=10.8E-9
*
(C) 1997 ZETEX PLC
The copyright in these models and the design embodied belong to Zetex PLC (Zetex). They are supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact (including
this notice) for that purpose only. All other rights are reserved. The models are believed accurate but no
condition or warranty as to their merchantability or fitness for purpose is given and no liability in respect of
any use is accepted by Zetex PLC, its distributors or agents. Zetex PLC, Fields New Road, Chadderton,
SAFE OPERATING AREA
Note: The Safe Operating Area (SOA) charts shown are a combination of the worst case secondary
breakdown characteristics for the NPN/PNP pair, and the thermal curves demonstrating the
power dissipation capability of the energised ZHB part (opposing NPN-PNP switched on) when
mounted on a 50mm x 50mm FR4 PCB. The two cases show:
i) full copper present and
ii) with minimal copper present - this being defined as an SM-8 footprint with 1.5mm tracks to
the edge of the PCB.
For example, on a 50mm x 50mm full copper PCB, the ZHB6790 will safely dissipate 2W under
DC conditions, taking note of continuous current ratings and voltage limits. Higher powers can
be tolerated for pulsed operation, while the shorter pulse widths (100
μ
s and 1ms) being relevant
for assessment of switching conditions.
The ZHB6790 H-Bridge can be modelled within SPICE using the following transistor models
configured in the standard H-Bridge topology, as shown in the schematic diagram of this datasheet.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZHB6790 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR ARRAY H-BRIDGE |
| ZHB6790TA | 功能描述:两极晶体管 - BJT H-Bridge-40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| ZHB6790TC | 功能描述:两极晶体管 - BJT H-Bridge-40V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| ZHB6792 | 制造商:Diodes Incorporated 功能描述: |
| ZHB6792TA | 功能描述:两极晶体管 - BJT H-Bridge-70V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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