参数资料
型号: ZHCS506
厂商: ZETEX PLC
元件分类: 参考电压二极管
英文描述: SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT”
中文描述: 1 A, SILICON, SIGNAL DIODE
封装: SOT-23, 3 PIN
文件页数: 1/3页
文件大小: 101K
代理商: ZHCS506
SOT23 SILICON HIGH CURRENT
SCHOTTKY BARRIER DIODE “SuperBAT”
ISSUE 1 - September 1997
%
FEATURES:
Low V
F
High Current Capability
APPLICATIONS:
DC - DC converters
Mobile telecomms
PCMCIA
PARTMARK DETAIL: S56
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
V
R
I
F
V
F
I
FAV
I
FSM
60
V
Forward Current (Continuous)
500
mA
Forward Voltage @ I
F
= 500mA
Average Peak Forward Current; D.C. = 50%
630
mV
1000
mA
Non Repetitive Forward Current t
100
μ
s
t
10ms
5.5
2.5
A
A
Power Dissipation at T
amb
= 25° C
Storage Temperature Range
P
tot
T
stg
T
j
330
mW
-55 to + 150
° C
Junction Temperature
125
° C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25° C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Reverse Breakdown
Voltage
V
(BR)R
60
80
V
I
R
= 200
μ
A
Forward Voltage
V
F
275
320
415
550
680
820
1120
565
310
360
470
630
800
960
1350
mV
mV
mV
mV
mV
mV
mV
mV
I
F
= 50mA*
I
F
= 100mA*
I
F
= 250mA*
I
F
= 500mA*
I
F
= 750mA*
I
F
= 1000mA*
I
F
= 1500mA*
I
F
= 500mA, T
amb
= 100° C*
Reverse Current
I
R
20
40
μ
A
V
R
= 45V
Diode Capacitance
C
D
20
pF
f= 1MHz,V
R
= 25V
Reverse Recovery
Time
t
rr
10
ns
switched from
I
= 500mA to I
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300
μ
s; duty cycle
2%.
ZHCS506
1
3
C
1
A
3
2
SOT23
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