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参数资料
| 型号： | ZNBG4001Q16 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | GENERATOR FIXED BIAS |
| 标准包装： | 2,500 |
| 功能： | 偏压控制器 |
| RF 型： | LNBs，PMR |
| 封装/外壳： | 16-SSOP（0.154"，3.90mm 宽） |
| 包装： | 散装 |
| 其它名称： | Q1232319 |
ZNBG4000 ZNBG4001
ZNBG6000 ZNBG6001
SYMBOL PARAMETER
CONDITIONS
Min
LIMITS
Typ
Max
UNITS
GATE CHARACTERISTICS
I GO
Output Current Range
-30
2000
μ A
Output Voltage
ZNBG4000/1
V OL
Output Low
I D1 to I D4 =12mA
V OH
Output High
I G1 to I G4 =0
I D1 to I D4 =12mA
I G1 to I G4 = -10 μ A
I D1 to I D4 = 8mA
I G1 to I G4 = 0
-3.5
-3.5
0
-2
-2
1
V
V
V
Output Voltage
ZNBG6000/1
V OL
Output Low
I D1 to I D6 =12mA
V OH
Output High
I G1 to I G6 = 0
I D1 to I D6 =12mA
I G1 to I G6 = -10 μ A
I D1 to I D6 = 8mA
I G1 to I G6 = 0
-3.5
-3.5
0
-2
-2
1
V
V
V
Notes:
1. The negative bias voltages specified are generated on-chip using an internal oscillator. Two external capacitors, C NB and C SUB , of
47nF are required for this purpose.
2. The characteristics are measured using two external reference resistors R CAL1 and R CAL2 of value 33k ? wired from pins R CAL1/2 to
ground. For the ZNBG4000, resistor R CAL1 sets the drain current of FETs 1 and 2, resistor R CAL2 sets the drain current of FETs 3 and 4.
For the ZNBG6000, resistor R CAL1 sets the drain current of FETs 1 and 4, resistor R CAL2 sets the drain current of FETs 2, 3, 5 and 6.
3. Noise voltage is not measured in production.
4. Noise voltage measurement is made with FETs and gate and drain capacitors in place on all
outputs. C G , 4.7nF, are connected between gate outputs and ground, C D , 10nF, are connected
between drain outputs and ground.
4-139
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