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参数资料
| 型号： | ZVN4206AVSTOB |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 60V TO92-3 |
| 标准包装： | 2,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 600mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1 欧姆 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 100pF @ 25V |
| 功率 - 最大： | 700mW |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-226-3、TO-92-3（TO-226AA）成形引线 |
| 供应商设备封装： | TO-92-3 |
| 包装： | 带卷 (TR) |
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - APRIL 1998
FEATURES
* 60 Volt V DS
* R DS(on) = 1 ?
* Repetitive avalanche rating
* No transient protection required
ZVN4206AV
* Characterised for 5V logic drive
APPLICATIONS
D
G
S
* Automotive relay drivers
* Stepper motor driver
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T amb =25°C
Continuous Body Diode Current at T amb
SYMBOL
V DS
I D
I DM
V GS
P tot
I SD
VALUE
60
600
8
± 20
700
600
UNIT
V
mA
A
V
mW
mA
=25°C
Avalanche Current – Repetitive
Avalanche Energy – Repetitive
Operating and Storage Temperature Range
I AR
E AR
T j :T stg
600
15
-55 to +150
mA
mJ
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown Voltage BV DSS
60
V
I D =1mA, V GS =0V
Gate-Source Threshold Voltage V GS(th)
1.3
3
V
I D =1mA, V DS = V GS
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
I GSS
I DSS
I D(on)
R DS(on)
3
100
10
100
1
1.5
nA
μ A
μ A
A
?
?
V GS = ± 20V, V DS =0V
V DS =60V, V GS =0
V DS =48V, V GS =0V, T=125°C (2)
V DS =25V, V GS =10V
V GS =10V,I D =1.5A
V GS =5V,I D =.0.5A
Forward Transconductance(1)(2) g fs
300
mS
V DS =25V,I D =1.5A
Input Capacitance (2)
C iss
100
pF
Common Source Output
C oss
60
pF
V DS =25V, V GS =0V, f=1MHz
Capacitance (2)
Reverse Transfer Capacitance (2) C rss
20
pF
Turn-On Delay Time (2)(3)
t d(on)
8
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t r
t d(off)
t f
12
12
15
ns
ns
ns
V DD ≈ 25V, I D =1.5A,V GEN =10V
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZVN4206AVSTZ | 功能描述:MOSFET Avalanche RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZVN4206C | 制造商:ZETEX 制造商全称:ZETEX 功能描述:N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| ZVN4206D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | CHIP |
| ZVN4206E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 60V V(BR)DSS | 500MA I(D) | DIP |
| ZVN4206G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 1A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:4 ;RoHS Compliant: Yes |
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