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| 型号： | ZVN4310GTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 100V SOT223 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.67A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 540 毫欧 @ 3.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 350pF @ 25V |
| 功率 - 最大： | 3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
A Product Line of
Diodes Incorporated
ZVN4310G
Maximum Ratings @T A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 3)
Symbol
V DSS
V GSS
I D
I DM
Value
100
±20
1.67
12
Unit
V
V
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 2)
(Note 2)
(Note 4)
P D
R θ JA
R θ JL
T J , T STG
3
41.7
8.84
-55 to +150
W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
On-State Drain Current
BV DSS
I DSS
I GSS
I D(on)
100
-
-
9
-
-
-
-
-
10
100
±20
-
V
μA
μA
nA
A
V GS = 0V, I D = 1mA
V DS = 100V, V GS = 0V
V DS = 80V, V GS = 0V, T A = 125°C
V GS = ±20V, V DS = 0V
V GS = 10V, V DS = 10V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V GS(th)
R DS (on)
g fs
1
-
0.6
-
0.4
0.5
-
3
0.54
0.75
-
V
Ω
S
V DS = V GS , I D = 1mA
V GS = 10V, I D = 3.3A
V GS = 5V, I D = 1.5A
V DS = 10V, I D = 3.3A
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
-
-
350
140
20
8
25
30
16
pF
pF
pF
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DD = 25V, I D = 3A, V GEN = 10V,
R GS = 50 ?
Notes:
2. For a device mounted on 50mm X 50mm X 1.6mm FR-4 PCB with high coverage of single sided 2oz copper, in still air condition.
3. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
4. Thermal resistance from junction to solder-point (at the end of the drain lead).
5. Short duration pulse test used to minimize self-heating effect.
ZVN4310G
Document number: DS33372 Rev. 4 - 2
2 of 5
www.diodes.com
January 2012
? Diodes Incorporated
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