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参数资料
| 型号： | ZXGD3001E6TA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC GATE DRVR IGBT/MOSFET SOT23-6 |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 1.3ns |
| 电流 - 峰： | 9A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 12V |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-23-6 |
| 包装： | 标准包装 |
| 产品目录页面： | 1479 (CN2011-ZH PDF) |
| 其它名称： | ZXGD3001E6DKR |
ZXGD3001E6
9A(peak) Gate driver in SOT23-6
General description
The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A
into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation
delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the
power MOSFET or IGBT to minimize power losses and distortion in high current fast switching
applications.
The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage
range allows full enhancement to minimize on-losses of the power MOSFET or IGBT.
Its low input voltage requirement and high current gain allows high current driving from low voltage
controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases
board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.
Features
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12V operating voltage range
9 Amps peak output current
Fast switching emitter-follower configuration
? 3ns propagation delay time
? 11ns rise/fall time, 1000pF load
Low input current requirement
? 4.2A(source)/2.2A(sink) output current from 10mA input
SOT23-6 package
Separate source and sink outputs for independent control of rise and fall time
Optimized pin-out to ease board layout and minimize trace inductance
No Latch Up
No shoot through
Near - Zero quiescent and output leakage current
Typical application circuit
V S
V CC
V CC
Input
IN 1
ZXGD3001
SOURCE
Issue 1 - October 2007
? Zetex Semiconductors plc 2007
IN 2
GND
1
SINK
www.zetex.com
相关PDF资料 |
PDF描述 |
|---|---|
| ZXGD3002E6TA | IC GATE DRVR IGBT/MOSFET SOT23-6 |
| ZXGD3003E6TA | IC GATE DRVR IGBT/MOSFET SOT23-6 |
| ZXGD3004E6TA | IC GATE DRVR IGBT/MOSFET SOT23-6 |
| ZXGD3005E6TA | IC GATE DVR IGBT/MOSFET SOT26 |
| ZXGD3101N8TC | IC SYNCH MOSFET CNTRLR 4A SO8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXGD3001E6TA-CUT TAPE | 制造商:DIODES 功能描述:ZXGD3001E6TA Single Channel 9 A High Side MosFet Driver - SOT-23-6 |
| ZXGD3002E6 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:9A(peak) Gate driver in SOT23-6 |
| ZXGD3002E6TA | 功能描述:功率驱动器IC 9A Gate Driver Mosfet RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| ZXGD3003E6 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:5A(peak) gate driver in SOT23-6 |
| ZXGD3003E6TA | 功能描述:功率驱动器IC 5A Gate Driver Mosfet RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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