参数资料
型号: ZXGD3101N8TC
厂商: Diodes Inc
文件页数: 4/14页
文件大小: 0K
描述: IC SYNCH MOSFET CNTRLR 4A SO8
标准包装: 1
配置: 高端或低端
输入类型: 非反相
延迟时间: 525ns
电流 - 峰: 4A
配置数: 2
输出数: 2
高端电压 - 最大(自引导启动): 180V
电源电压: 5 V ~ 15 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: ZXGD3101N8TCDKR
A Product Line of
Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Schematic Symbol and Pin Out Details
Vcc
Gate drive
+
Differential
- amplifier
amplitude
control
DRAIN
+
High volt
- comparator
Turn-on/off
control
Driver
GATEH
Threshold
voltage
control
GATEL
REF
BIAS
GND
Pin No.
1
2
3
4
5
6
7
8
Symbol
NC
REF
GATEL
GATEH
V CC
GND
BIAS
DRAIN
Description and function
No connection
This pin can be connected to GND
Reference
This pin is connected to V CC via resistor, R REF . R REF should be selected to source approximately 3mA into this pin.
(Note 8)
Gate turn off
This pin sinks current, I SINK , from the synchronous MOSFET Gate.
Gate turn on
This pin sources current, I SOURCE , to the synchronous MOSFET Gate.
Power Supply
This is the supply pin. It is recommended to decouple this point to ground closely with a ceramic capacitor.
Ground
This is the ground reference point. Connect to the synchronous MOSFET Source terminal.
Bias
This pin is connected to V CC via resistor, R BIAS . R BIAS should be selected to source 1.6 times I REF into this pin.
(Note 9)
Drain connection
This pin connects directly to the synchronous MOSFET Drain terminal.
Notes:
8. REF pin should be assumed to be at GND +0.7V.
9. BIAS pin should be assumed to be at GND +0.3V.
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
4 of 14
www.diodes.com
June 2010
? Diodes Incorporated
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