参数资料
型号: ZXGD3101N8TC
厂商: Diodes Inc
文件页数: 5/14页
文件大小: 0K
描述: IC SYNCH MOSFET CNTRLR 4A SO8
标准包装: 1
配置: 高端或低端
输入类型: 非反相
延迟时间: 525ns
电流 - 峰: 4A
配置数: 2
输出数: 2
高端电压 - 最大(自引导启动): 180V
电源电压: 5 V ~ 15 V
工作温度: -40°C ~ 150°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: ZXGD3101N8TCDKR
A Product Line of
Diodes Incorporated
ZXGD3101N8
SYNCHRONOU S R ECTIFIER CONTROLLER
Operation
Normal Operation
The operation of the device is described step-by-step with reference to the timing diagram below.
1. The detector monitors the MOSFET Drain-Source voltage.
2. When, due to transformer action, the MOSFET body diode is forced to conduct there is approximately -0.6V on the Drain pin.
3. The detector outputs a positive voltage with respect to ground, this voltage is then fed to the MOSFET driver stage and current is sourced out of
the GATEH pin.
4. The current out of the GATEH pin is sourced into the synchronous MOSFET Gate to turn the device on.
5. The GATEH output voltage is now proportional to the Drain-Source voltage drop across the MOSFET due to the current flowing through the
MOSFET.
6. MOSFET conduction continues until the drain current reaches zero.
7. At zero current the detector output voltage is zero and the synchronous MOSFET Gate voltage is pulled low by the GATEL, turning the device
off.
Body Diode
Conduction
Drain
current
zero
MOSFET
Gate Current
ZXGD3101N8
Document Number DS31945 Rev. 1 - 2
5 of 14
www.diodes.com
June 2010
? Diodes Incorporated
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