- 您现在的位置：买卖IC网 > PDF目录21860 > ZXM61N03FTA (Diodes Inc)MOSFET N-CH 30V 1.4A SOT23-3 PDF资料下载
参数资料
| 型号： | ZXM61N03FTA |
| 厂商： | Diodes Inc |
| 文件页数： | 4/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.4A SOT23-3 |
| 其它图纸： | SOT-23 SOT-23 Top |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 220 毫欧 @ 910mA，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 25V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
| 其它名称： | ZXM61N03FDKR |
ZXM61N03F
ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
30
V
I D =250 μ A, V GS =0V
Zero Gate Voltage Drain Current
I DSS
1
μ A
V DS =30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS = ± 20V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
1.0
V
I D =250 μ A, V DS = V GS
Static Drain-Source On-State Resistance
(1)
R DS(on)
0.22
0.30
?
?
V GS =10V, I D =0.91A
V GS =4.5V, I D =0.46A
Forward Transconductance (3)
g fs
0.87
S
V DS =10V,I D =0.46A
DYNAMIC (3)
Input Capacitance
C iss
150
pF
Output Capacitance
C oss
35
pF
V DS =25 V, V GS =0V,
f=1MHz
Reverse Transfer Capacitance
C rss
15
pF
SWITCHING (2) (3)
Turn-On Delay Time
t d(on)
1.9
ns
Rise Time
Turn-Off Delay Time
t r
t d(off)
2.5
5.8
ns
ns
V DD =15V, I D =0.91A
R G =6.2 ? , R D =16 ?
(refer to test
Fall Time
t f
3.0
ns
circuit)
Total Gate Charge
Q g
4.1
nC
Gate-Source Charge
Q gs
0.4
nC
V DS =24V,V GS =10V,
I D =0.91A
Gate-Drain Charge
Q gd
0.63
nC
(refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.95
V
T J =25°C, I S =0.91A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
11.0
3.5
ns
nC
T J =25°C, I F =0.91A,
di/dt= 100A/ μ s
NOTES
(1) Measured under pulsed conditions. Width ≤ 300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
相关PDF资料 |
PDF描述 |
|---|---|
| XPCWHT-L1-0000-00B07 | LED COOL WHITE 500MA SMD |
| XPCWHT-L1-0000-00B03 | LED COOL WHITE 500MA SMD |
| OPB360T11 | SENS OPTO SLOT 3.18MM TRANS THRU |
| XPCWHT-L1-0000-00A09 | LED COOL WHITE 500MA SMD |
| OPB360P11 | SENS OPTO SLOT 3.18MM TRANS C-MT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM61N03FTA-CUT TAPE | 制造商:DIODES 功能描述:ZXM61N03F 30 V 0.22 Ohm N-Channel Enhancement Mode Vertical DMOS FET - SOT-23 |
| ZXM61N03FTC | 功能描述:MOSFET 30V N Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXM61P02 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61P02F | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23 制造商:DIODES 功能描述:MOSFET, P, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:90 制造商:Diodes Incorporated 功能描述:P CH MOSFET, -20V, 900mA, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:900mA, Drain Source Voltage Vds:-20V, On Resistance Rds(on):600mohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-700mV , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23, Transistor Polarity:P Channel, Continuous Drain Current Id:90 |
| ZXM61P02F_04 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET |
发布紧急采购，3分钟左右您将得到回复。