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参数资料
| 型号： | ZXM61P02FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN 20V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 900mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 610mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.5nc @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 15V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
ZXM61P02F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GS
Value
-20
±12
Units
V
V
Continuous Drain Current
V GS = 4.5V
T A = +25°C (Note 6)
T A = +70°C (Note 6)
I D
-0.9
-0.7
A
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
I DM
I S
I SM
-4.9
-0.9
-4.9
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
T J, T STG
Value
625
5
806
6.4
200
155
-55 to +150
Unit
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10 μ s - pulse current limited by maximum junction temperature.
Thermal Characteristics
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
2 of 7
www.diodes.com
October 2013
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM61P03 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61P03F | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23 制造商:Diodes Incorporated 功能描述:P CHANNEL MOSFET, -30V, 1.1A SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes |
| ZXM61P03F | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 |
| ZXM61P03F_05 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61P03FTA | 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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