- 您现在的位置：买卖IC网 > Datasheet目录539 > ZXM61P02FTC (Diodes Inc)MOSFET P-CHAN 20V SOT23-3 Datasheet资料下载
参数资料
| 型号： | ZXM61P02FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CHAN 20V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 900mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 600 毫欧 @ 610mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.5nc @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 150pF @ 15V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
ZXM61P02F
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-0.1
±100
V
μ A
nA
I D = -250 μ A, V GS = 0V
V DS = -20V, V GS = 0V
V GS = ? 12V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 and 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
-0.7
?
0.56
?
?
?
?
?
?
?
14.9
5.6
-1.5
0.6
0.9
?
-0.95
?
?
V
?
S
V
ns
nC
I D = -250 ? A, V DS = V GS
V GS = -4.5V, I D = -0.61A
V GS = -2.7V, I D = -0.31A
V DS = -10V, I D = -0.31A
T J = +25°C, I S = -0.61A, V GS = 0V
T J = +25°C, I F = -0.61A,
di/dt = 100A/ μ s
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
?
?
?
?
?
?
?
?
?
?
150
70
30
2.9
6.7
11.2
10.1
3.5
0.5
1.5
?
?
?
?
?
?
?
?
?
?
pF
ns
nC
V DS = -15V, V GS = 0V
f = 1.0MHz
V DD = -110V, I D = -0.93A,
R G ? 6.2 ? ?? R D ? 11 ? ??
V DS = -16V, V GS = -4.5V,
I D = -0.61A
Notes:
8. Measured under pulsed conditions. Pulse width = 300 μ s. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
ZXM61P02F
Document Number DS33478 Rev. 3 - 2
3 of 7
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| ZXM61P03FTC | MOSFET P-CHAN 30V SOT23-3 |
| ZXM62N03GTA | MOSFET N-CH 30V ENHANCE SOT223 |
| ZXM62P02E6TA | MOSFET P-CH 20V 2.3A SOT23-6 |
| ZXM62P03E6TA | MOSFET P-CH 30V 2.6A SOT-23-6 |
| ZXM64N02XTC | MOSFET N-CHAN 20V MSOP8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXM61P03 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61P03F | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, P, SOT-23 制造商:Diodes Incorporated 功能描述:P CHANNEL MOSFET, -30V, 1.1A SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):350mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes |
| ZXM61P03F | 制造商:Diodes Incorporated 功能描述:MOSFET P SOT-23 |
| ZXM61P03F_05 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V P-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXM61P03FTA | 功能描述:MOSFET 30V P-Chnl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。