参数资料
型号: ZXMC3A17DN8TC
厂商: Diodes Inc
文件页数: 2/10页
文件大小: 0K
描述: MOSFET N/P-CHAN DUAL 30V 8SOIC
标准包装: 2,500
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4.1A,3.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 7.8A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 12.2nC @ 10V
输入电容 (Ciss) @ Vds: 600pF @ 25V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)
ZXMC3A17DN8
ABSOLUTE MAXIMUM RATINGS
ADVANCE INFORMATION
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DSS
V GS
N-channel
30
±20
P-channel
-30
±20
UNIT
V
V
Continuous Drain Current
(V GS = 10V; T A =25°C) (b)(d)
(V GS = 10V; T A =70°C) (b)(d)
(V GS = 10V; T A =25°C) (a)(d)
Pulsed Drain Current (c)
I D
I DM
5.4
4.3
4.1
23
-4.4
-3.6
-3.4
-20
A
A
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode) (c)
(a) (d)
Power Dissipation at T A =25°C
(b)
I S
I SM
P D
2.6
23
1.25
-2.5
-20
A
A
W
Linear Derating Factor
10
mW/°C
Power Dissipation at T A =25°C (a) (e)
Linear Derating Factor
Power Dissipation at T A =25°C (b) (d)
Linear Derating Factor
Operating and Storage Temperature Range
P D
P D
T j , T stg
1.8
14
2.1
17
-55 to +150
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient
(a) (d)
R JA
100
°C/W
Junction to Ambient (a) (e)
R JA
70
°C/W
Junction to Ambient
(b) (d)
R JA
60
°C/W
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300 s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with two active die running at equal power.
ISSUE 1 - OCTOBER 2005
SEMICONDUCTORS
2
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