参数资料
型号: ZXMC3A18DN8TA
厂商: Diodes Inc
文件页数: 7/12页
文件大小: 0K
描述: MOSFET N-CH/P-CH 30V 8-SOIC
产品目录绘图: SO-8
SO-8 Dual Pin Out
标准包装: 1
FET 型: N 和 P 沟道
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5.8A,4.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 5.8A,10V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 36nC @ 10V
输入电容 (Ciss) @ Vds: 1800pF @ 25V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SO
包装: 标准包装
其它名称: ZXMC3A18DN8DKR
ZXMC3A18DN8
P-channel
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
Static
Drain-source breakdown
V (BR)DSS
-30
V
I D = -250 A, V GS =0V
voltage
Zero gate voltage drain current I DSS
-1.0
A
V DS = -30V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage V GS(th)
-1.0
V
I D = -250 A, V DS =V GS
Static drain-source on-state
resistance (*)
R DS(on)
0.035
0.050
W
V GS = -10V, I D = -4.8A
V GS = -4.5V, I D = -4.0A
Forward transconductance (*)(?) g fs
8.6
S
V DS = -15V, I D = -4.8A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1603
434
388
pF
pF
pF
V DS = -15V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t d(on)
t r
t d(off)
t f
Q g
4.8
9.5
60
38
25
ns
ns
ns
ns
nC
V DD = -15V, I D = -1A
R G @ 6.0 , V GS = 10V
V DS = -15V, V GS = -5V
I D = -4.8A
Total gate charge
Gate-source charge
Gate drain charge
Q g
Q gs
Q gd
45
5.1
11.5
nC
nC
nC
V DS = -15V, V GS = -10V
I D = -4.8A
Source-drain diode
Diode forward voltage (*)
V SD
0.82
-0.95
V
T j =25°C, I S = -3.7
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
32.5
18.4
ns
nC
T j =25°C, I S = -2.2,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 2 - September 2007
? Zetex Semiconductors plc 2007
7
www.zetex.com
相关PDF资料
PDF描述
ZXMC3AM832TA MOSFET N+P 30V 2.7A 8MLP 3 X 2
ZXMC3AMCTA MOSFET N+P 30V 2.9A/2.1A DFN
ZXMC4559DN8TA MOSFET N/P-CHAN DUAL 60V 8SOIC
ZXMC4A16DN8TC MOSFET N/P-CHAN DUAL 40V 8SOIC
ZXMD63C03XTC MOSFET N/P-CHAN DUAL 30V 8MSOP
相关代理商/技术参数
参数描述
ZXMC3A18DN8TC 制造商:ZETEX 制造商全称:ZETEX 功能描述:COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3AM832 制造商:ZETEX 制造商全称:ZETEX 功能描述:MPPS⑩ Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET
ZXMC3AM832(1) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMC3AM832(2) 制造商:未知厂家 制造商全称:未知厂家 功能描述:
ZXMC3AM832TA 功能描述:MOSFET Cmp 30V NP Ch UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube