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| 型号： | ZXMC3AMCTA |
| 厂商： | Diodes Inc |
| 文件页数： | 4/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N+P 30V 2.9A/2.1A DFN |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A，2.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 190pF @ 25V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（3x2） |
| 包装： | 标准包装 |
| 其它名称： | ZXMC3AMCTADKR |
A Product Line of
Diodes Incorporated
ZXMC3AMC
Electrical Characteristics – Q1 N-Channel @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
0.5
±100
V
μ A
nA
I D = 250 μ A, V GS = 0V
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 10)
Forward Transconductance (Note 10 & 11)
Diode Forward Voltage (Note 10)
Reverse Recover Time (Note 11)
Reverse Recover Charge (Note 11)
V GS(th)
R DS (ON)
g fs
V SD
t rr
Q rr
1.0
-
-
-
-
-
-
0.100
0.140
3.5
0.85
17.7
13.0
3.0
0.120
0.180
-
0.95
-
-
V
?
S
V
ns
nC
I D = 250 μ A, V DS = V GS
V GS = 10V, I D = 2.5A
V GS = 4.5V, I D = 2.0A
V DS = 10V, I D = 2.5A
I S = 1.7A, V GS = 0V
I S = 2.5A, di/dt= 100A/μs
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 12)
Total Gate Charge (Note 12)
C iss
C oss
C rss
Q g
Q g
-
-
-
-
-
190
38
20
2.3
3.9
-
-
-
-
-
pF
pF
pF
nC
nC
V DS = 25V, V GS = 0V,
f = 1.0MHz
V GS = 4.5V
V DS = 15V
Gate-Source Charge (Note 12)
Gate-Drain Charge (Note 12)
Turn-On Delay Time (Note 12)
Q gs
Q gd
t D(on)
-
-
-
0.6
0.9
1.7
-
-
-
nC
nC
ns
V GS = 10V
I D = 2.5A
Turn-On Rise Time (Note 12)
Turn-Off Delay Time (Note 12)
Turn-Off Fall Time (Note 12)
t r
t D(off)
t f
-
-
-
2.3
6.6
2.9
-
-
-
ns
ns
ns
V DS = 15V, I D = 2.5A
V GS = 10V, R G = 6 ?
Notes:
10. Measured under pulsed conditions. Width ≤ 300μs. Duty cycle ≤ 2%.
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperature.
ZXMC3AMC
Document number: DS35088 Rev. 1 - 2
4 of 11
www.diodes.com
December 2010
? Diodes Incorporated
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