- 您现在的位置：买卖IC网 > Datasheet目录539 > ZXMD63C03XTC (Diodes Inc)MOSFET N/P-CHAN DUAL 30V 8MSOP Datasheet资料下载
参数资料
| 型号： | ZXMD63C03XTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CHAN DUAL 30V 8MSOP |
| 标准包装： | 4,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A，2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 135 毫欧 @ 1.7A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 290pF @ 25 V |
| 功率 - 最大： | 1.04W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
ZXMD63C03X
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate- Source Voltage
SYMBOL
V DSS
V GS
N-CHANNEL
30
P-CHANNEL
-30
20
UNIT
V
V
Continuous Drain Current
(V GS =4.5V; T A =25°C)(b)(d)
(V GS =4.5V; T A =70°C)(b)(d)
Pulsed Drain Current (c)(d)
Continuous Source Current (Body Diode)(b)(d)
Pulsed Source Current (Body Diode)(c)(d)
Power Dissipation at T A =25°C (a)(d)
Linear Derating Factor
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
I D
I DM
I S
I SM
P D
P D
P D
T j :T stg
2.3
1.8
14
1.5
14
-2.0
-1.6
-9.6
-1.4
-9.6
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R θ JA
R θ JA
R θ JA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 2 - SEPTEMBER 2007
2
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMD63N02XTC | MOSFET DUAL N-CHAN 20V 8MSOP |
| ZXMD63N03XTC | MOSFET DUAL N-CHAN 30V 8MSOP |
| ZXMD63P02XTC | MOSFET DUAL P-CHAN 20V 8MSOP |
| ZXMD63P03XTC | MOSFET DUAL P-CHAN 30V 8MSOP |
| ZXMHC10A07T8TA | MOSFET H-BRIDGE N/P-CH 100V SM8 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMD63N02 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMD63N02X | 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NN, MSOP8 制造商:DIODES 功能描述:MOSFET, DUAL, NN, MSOP8, Transistor Polarity:N Channel, Continuous Drain Current 制造商:Diodes Incorporated 功能描述:MOSFET, DUAL, NN, MSOP8, Transistor Polarity:N Channel, Continuous Drain Current 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DUAL, 20V, 2.4A, MSOP, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:20V, On Resistance Rds(on):130mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:700mV , RoHS Compliant: Yes |
| ZXMD63N02X | 制造商:Diodes Incorporated 功能描述:MOSFET DUAL NN MSOP8 |
| ZXMD63N02XTA | 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMD63N02XTC | 功能描述:MOSFET Dual 20V N Chl HDMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。