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参数资料
| 型号： | ZXMD63C03XTC |
| 厂商： | Diodes Inc |
| 文件页数： | 5/12页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CHAN DUAL 30V 8MSOP |
| 标准包装： | 4,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A，2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 135 毫欧 @ 1.7A，10V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 290pF @ 25 V |
| 功率 - 最大： | 1.04W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
ZXMD63C03X
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V (BR)DSS
I DSS
30
1
V
μ A
I D =250 μ A, V GS =0V
V DS =30V, V GS =0V
Gate-Body Leakage
I GSS
100
nA
V GS =
20V, V DS =0V
Gate-Source Threshold Voltage
V GS(th)
1.0
V
I D =250 μ A, V DS = V GS
Static Drain-Source On-State Resistance (1) R DS(on)
0.135 Ω
0.200 Ω
V GS =10V, I D =1.7A
V GS =4.5V, I D =0.85A
Forward Transconductance (3)
g fs
1.9
S
V DS =10V,I D =0.85A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
290
70
20
pF
pF
pF
V DS =25 V, V GS =0V,
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time
t d(on)
2.5
ns
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t r
t d(off)
t f
Q g
Q gs
Q gd
4.1
9.6
4.4
8
1.2
2
ns
ns
ns
nC
nC
nC
V DD =15V, I D =1.7A
R G =6.1 Ω , R D =8.7 Ω
(Refer to test circuit)
V DS =24V,V GS =10V,
I D =1.7A
(Refer to test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.95
V
T j =25°C, I S =1.7A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t rr
Q rr
16.9
9.5
ns
nC
T j =25°C, I F =1.7A,
di/dt= 100A/ μ s
NOTES:
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - SEPTEMBER 2007
5
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