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参数资料
| 型号： | ZXMD63N02XTC |
| 厂商： | Diodes Inc |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CHAN 20V 8MSOP |
| 标准包装： | 4,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 130 毫欧 @ 1.7A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 350pF @ 15V |
| 功率 - 最大： | 870mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
ZXMD63N02X
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
1.0
100
V
μA
nA
V GS = 0V, I D = 250 μ A
V DS = 20V, V GS = 0V
V GS = ±12V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 11)
Forward Transconductance (Notes 11 & 13)
Diodes Forward Voltage (Note 11)
V GS(th)
R DS (ON)
g fs
V SD
0.7
-
2.6
-
-
65
90
-
0.85
3
130
150
-
0.95
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 4.5V, I D = 1.7A
V GS = 2.7V, I D = 0.85A
V DS = 10V, I D = 0.85A
T J = 25°C, I S = 1.7A, V GS = 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 12 & 13)
Output Capacitance (Notes 12 & 13)
Reverse Transfer Capacitance (Notes 12 & 13)
Gate Resistance (Notes 12 & 13)
Total Gate Charge (Notes 12 & 13)
Gate-Source Charge (Notes 12 & 13)
Gate-Drain Charge (Notes 12 & 13)
Reverse Recovery Time (Note 13)
Reverse Recovery Charge (Note 13)
Turn-On Delay Time (Notes 12 & 13)
Turn-On Rise Time (Notes 12 & 13)
Turn-Off Delay Time (Notes 12 & 13)
Turn-Off Fall Time (Notes 12 & 13)
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t rr
Q rr
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
-
350
120
50
3.8
4.5
0.5
2
15
5.9
3.4
8.1
13.5
9.1
700
250
100
7.6
6
0.65
2.5
30
-
-
-
-
-
pF
?
nC
ns
nC
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
f = 1MHz, V GS = 0V, V DS = 0V
V GS = 4.5V, V DS = 16V,
I D = 1.7A
T J = +25°C, I F = 1.7A,
di/dt = 100A/μs
V DD = 10V, I D = 1.7A,
R G = 6 ? , R D = 5.7 ? ,
Notes:
11. Measured under pulsed conditions. Pulse width ≤ 300 μ s; duty cycle ≤ 2%.
12. Switching characteristics are independent of operating junction temperature.
13. For design aid only, not subject to production testing.
ZXMN63N02X
Document number: DS33500 Rev. 2 - 2
4 of 8
www.diodes.com
June 2012
? Diodes Incorporated
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