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参数资料
| 型号： | ZXMN10A07FTA |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 700MA SOT23-3 |
| 其它图纸： | SOT-23 SOT-23 Top |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 700mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 138pF @ 50V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMN10A07FDKR |
A Product Line of
Diodes Incorporated
ZXMN10A07F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
@ V GS = 10V;
T A = +25°C (Note 6)
Symbol
V DSS
V GSS
Value
100
±20
0.8
Unit
V
V
Continuous Drain Current
Steady
State
@ V GS = 10V;
@ V GS = 10V;
T A = +70°C (Note 6)
T A = +100°C (Note 6)
I D
0.6
0.5
A
@ V GS = 10V;
T A = +25°C (Note 5)
0.7
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
I DM
I S
I SM
3.5
0.5
3.5
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
R θ JL
T J , T STG
Value
625
806
200
155
194
-55 to +150
Unit
mW
mW
°C/W
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 μ s – pulse width limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
0.7
R DS(on)
1 Limited
0.6
0.5
100m
DC
1s
100ms
0.4
0.3
10m
Single Pulse
T amb =25°C
10ms
1ms
100μs
0.2
0.1
1m
1 10 100
V DS Drain-Source Voltage (V)
0.0
0
20
40 60 80 100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
200
150
T amb =25°C
10
Single Pulse
T amb =25°C
D=0.5
100
50
D=0.2
Single Pulse
D=0.05
1
D=0.1
0
100μ
1m
10m 100m
1
10
100
1k
100μ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
2 of 7
www.diodes.com
August 2012
? Diodes Incorporated
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