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参数资料
| 型号： | ZXMN10A07FTA |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 700MA SOT23-3 |
| 其它图纸： | SOT-23 SOT-23 Top |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 700mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 138pF @ 50V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMN10A07FDKR |
A Product Line of
Diodes Incorporated
ZXMN10A07F
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
100
—
—
—
—
—
—
1.0
100
V
μA
nA
V GS = 0V, I D = 250 μ A
V DS = 100V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 9)
Forward Transconductance (Notes 9 & 11)
Diodes Forward Voltage (Note 9)
V GS(th)
R DS (ON)
g fs
V SD
2
—
—
—
—
540
700
1.6
0.85
4
700
900
—
0.95
V
m ?
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 1.5A
V GS = 6V, I D = 1A
V DS = 15V, I D = 1A
T J = +25°C, I S = 1.5A, V GS = 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Notes 10 & 11)
Output Capacitance (Notes 10 & 11)
Reverse Transfer Capacitance (Notes 10 & 11)
Gate Resistance (Notes 10 & 11)
Total Gate Charge (Notes 10 & 11)
Gate-Source Charge (Notes 10 & 11)
Gate-Drain Charge (Notes 10 & 11)
Reverse Recovery Time (Note 11)
Reverse Recovery Charge (Note 11)
Turn-On Delay Time (Notes 10 & 11)
Turn-On Rise Time (Notes 10 & 11)
Turn-Off Delay Time (Notes 10 & 11)
Turn-Off Fall Time (Notes 10 & 11)
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t rr
Q rr
t D(on)
t r
t D(off)
t f
—
—
—
—
—
—
—
—
—
—
—
—
—
138
12
6
2
2.9
0.7
1
27
12
1.8
1.5
4.1
2.1
280
25
12
4
6
1.5
2
60
—
—
—
—
—
pF
?
nC
ns
nC
ns
V DS = 50V, V GS = 0V,
f = 1.0MHz
f = 1MHz, V GS = 0V, V DS = 0V
V GS = 10V, V DS = 50V,
I D = 1A
T J = +25°C, I F = 1.8A,
di/dt = 100A/μs
V GS = 10V, V DD = 50V,
R G = 6 ? , I D = 1A
Notes:
9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
3 of 7
www.diodes.com
August 2012
? Diodes Incorporated
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