- 您现在的位置：买卖IC网 > Datasheet目录540 > ZXMN10A07FTC (Diodes Inc)MOSFET N-CHAN 100V SOT23-3 Datasheet资料下载
参数资料
| 型号： | ZXMN10A07FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 100V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 700mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 138pF @ 50V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
A Product Line of
Diodes Incorporated
ZXMN10A07F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
@ V GS = 10V;
T A = +25°C (Note 6)
Symbol
V DSS
V GSS
Value
100
±20
0.8
Unit
V
V
Continuous Drain Current
Steady
State
@ V GS = 10V;
@ V GS = 10V;
T A = +70°C (Note 6)
T A = +100°C (Note 6)
I D
0.6
0.5
A
@ V GS = 10V;
T A = +25°C (Note 5)
0.7
Pulsed Drain Current (Note 7)
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
I DM
I S
I SM
3.5
0.5
3.5
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
P D
P D
R θ JA
R θ JA
R θ JL
T J , T STG
Value
625
806
200
155
194
-55 to +150
Unit
mW
mW
°C/W
°C/W
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
7. Repetitive rating - 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 μ s – pulse width limited by maximum junction temperature.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
0.7
R DS(on)
1 Limited
0.6
0.5
100m
DC
1s
100ms
0.4
0.3
10m
Single Pulse
T amb =25°C
10ms
1ms
100μs
0.2
0.1
1m
1 10 100
V DS Drain-Source Voltage (V)
0.0
0
20
40 60 80 100 120 140 160
Temperature (°C)
Safe Operating Area
Derating Curve
200
150
T amb =25°C
10
Single Pulse
T amb =25°C
D=0.5
100
50
D=0.2
Single Pulse
D=0.05
1
D=0.1
0
100μ
1m
10m 100m
1
10
100
1k
100μ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ZXMN10A07F
Document number: DS33564 Rev. 6 - 2
2 of 7
www.diodes.com
August 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMN10A07ZTA | MOSFET N-CH 100V 1A SOT-89 |
| ZXMN10A08DN8TC | MOSFET N-CHAN 100V 8SOIC |
| ZXMN10A08E6TC | MOSFET N-CHAN 100V SOT23-6 |
| ZXMN10A08G | MOSFET N-CHAN 100V SOT223 |
| ZXMN10A09KTC | MOSFET N-CH 100V 5A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN10A07Z | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A07Z_04 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A07ZTA | 功能描述:MOSFET 100V N-Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN10A08 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V SOT223 N-channel enhancement mode MOSFET |
| ZXMN10A08DN8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
发布紧急采购，3分钟左右您将得到回复。