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| 型号： | ZXMN10A07ZTA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 1A SOT-89 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 700 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 138pF @ 50V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-243AA |
| 供应商设备封装： | SOT-89-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMN10A07ZDKR |
A Product Line of
Diodes Incorporated
ZXMN10A07Z
100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE
Product Summary
Features and Benefits
V (BR)DSS
100V
R DS(on) Max
700m Ω @ V GS = 10V
900m Ω @ V GS = 6V
I D max
T A = 25 ° C
(Note 6)
1.4A
1.2A
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Low On-Resistance
Low Threshold
Fast Switching Speed
Low Gate Drive
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
? Case: SOT89
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Case Material: Molded Plastic, “Green” Molding Compound.
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DC-DC Converters
Power Management functions
Motor control
Disconnect switches
SOT89
D
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UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.052 grams (approximate)
G
S
Top View
Ordering Information (Note 4)
Device symbol
Top View
Pin-Out
Product
ZXMN10A07ZTA
Marking
7N10
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com
Marking Information
7N10
7N10 = Product type Marking Code
ZXMN10A07Z
Document number DS33565 Rev. 7- 2
1 of 7
www.diodes.com
June 2012
? Diodes Incorporated
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| ZXMN10A08DN8TC | MOSFET N-CHAN 100V 8SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN10A08 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V SOT223 N-channel enhancement mode MOSFET |
| ZXMN10A08DN8 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A08DN8TA | 功能描述:MOSFET 100V 2.1A N-Channel Enhancement MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN10A08DN8TC | 功能描述:MOSFET N-CHAN 100V 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| ZXMN10A08E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23-6 |
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