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参数资料
| 型号： | ZXMN10A09KTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 5A DPAK |
| 其它图纸： | D-PAK D-PAK Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 4.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 26nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1313pF @ 50V |
| 功率 - 最大： | 2.15W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMN10A09KDKR |
A Product Line of
Diodes Incorporated
ZXMN10A09K
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source voltage
Gate-Source voltage
Characteristic
Symbol
V DSS
V GS
Value
100
± 20
Unit
V
V
Continuous Drain current
V GS = 10V
(Note 3)
T A = 70 ° C (Note 3)
I D
7.7
6.2
A
(Note 2)
5.0
Pulsed Drain current
V GS = 10V
(Note 4)
I DM
27
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 3)
(Note 4)
I S
I SM
11
27
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
(Note 2)
Symbol
Value
4.31
34.4
Unit
Power dissipation
Linear derating factor
(Note 3)
P D
10.1
80.8
W
mW/ ° C
(Note 6)
(Note 2)
2.15
17.2
29
Thermal Resistance, Junction to Ambient
(Note 3)
R θ JA
12.3
° C/W
(Note 6)
58
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 5)
R θ JL
T J , T STG
1.14
-55 to 150
° C/W
° C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
2 of 8
www.diodes.com
January 2010
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMN10A11GTC | MOSFET N-CH 100V 1.7A SOT223 |
| ZXMN10A11K | MOSFET N-CHAN 100V DPAK |
| ZXMN10A25GTA | MOSFET N-CHAN 100V SOT223 |
| ZXMN10A25KTC | MOSFET N-CH 100V DPAK |
| ZXMN10B08E6TC | MOSFET N-CHAN 100V SOT23-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 100V, 2.4A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes |
| ZXMN10A11G | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-223 |
| ZXMN10A11G_04 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTA | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN10A11GFTC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V N-CHANNEL ENHANCEMENT MODE MOSFET |
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