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| 型号： | ZXMN10A11K |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 100V DPAK |
| 其它图纸： | D-PAK D-PAK Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 2.6A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 274pF @ 50V |
| 功率 - 最大： | 2.11W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1474 (CN2011-ZH PDF) |
| 其它名称： | ZXMN10A11KDKR |
A Product Line of
Diodes Incorporated
ZXMN10A11K
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
100V
R DS(on)
350m ? @ V GS = 10V
450m ? @ V GS = 6V
I D
T A = 25 ° C
3.5A
3.1A
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Fast switching speed
Low input capacitance
“Green” Component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
and yet maintain superior switching performance, making it ideal for
high efficiency power management applications.
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Case: TO252-3L
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
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Motor control
DC-DC Converters
Power management functions
Uninterrupted power supply
TO252-3L
D
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Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
D
G
D
G
S
S
Top View
Ordering Information
(Note 1)
Pin Out – Top View
Equivalent Circuit
Product
ZXMN10A11KTC
Marking
See Below
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website. For packaging details, go to our website.
Marking Information
ZXMN
10A11
YYWW
ZXMN = Product Type Marking Code, Line 1
10A11 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXMN10A11K
Document Number DS32058 Rev. 2 - 2
1 of 8
www.diodes.com
January 2010
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
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| ZXMN10A11KTC | 功能描述:MOSFET N-Chan 100V MOSFET (UMOS) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN10A25G | 制造商:ZETEX 制造商全称:ZETEX 功能描述:100V SOT223 N-channel enhancement mode MOSFET |
| ZXMN10A25GTA | 功能描述:MOSFET 100V N-Channel 2.9A MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN10A25K | 功能描述:MOSFET N-CHAN 100V DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| ZXMN10A25KTC | 功能描述:MOSFET N-Chan 100V MOSFET (UMOS) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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