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| 型号： | ZXMN2A01FTC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 20V SOT23-3 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 303pF @ 15V |
| 功率 - 最大： | 625mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 带卷 (TR) |
ZXMN2A01F
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
T A = +25°C
Symbol
V DSS
V GSS
Value
20
± 12
2.2
Units
V
V
Continuous Drain Current, V GS = 10V
Pulsed Drain Current (Note 7)
Maximum Body Diode Continuous Current (Note 6)
Maximum Body Diode Continuous Current (Note 7)
(Note 6)
(Note 5)
T A = +70°C
T A = +25°C
I D
I DM
I S
I SM
1.7
1.9
8
1.29
8
A
A
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Linear Derating Factor
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P D
P D
R θ JA
T J, T STG
625
5
806
6.4
200
155
-55 to +150
mW
mW/°C
mW
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t ≦ 5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 μ s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.
ZXMN2A01F
Document number: DS33513 Rev. 3 - 2
2 of 7
www.diodes.com
March 2014
? Diodes Incorporated
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