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参数资料
| 型号： | ZXMN2AM832TA |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 20V 8MLP |
| 产品变化通告： | MLP322, 832 Pkg Discontinuation 20/Dec/2010 |
| 其它图纸： | MLP832 MLP832 Side MLP832 Pin Out MLP832 Bottom |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 299pF @ 15V |
| 功率 - 最大： | 1.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-MLP |
| 供应商设备封装： | 8-MLP（3x2） |
| 包装： | 标准包装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
| 其它名称： | ZXMN2AM832DKR |
OBSOLETE - PLEASE USE ZXMN2AMCTA
ZXMN2AM832
MPPS? Miniature Package Power Solutions
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V (BR)DSS = 20V; R DS(ON) = 0.12 ; I D = 3A
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package)
outline this dual 20V N channel Trench MOSFET utilizes a unique structure
combining the benefits of Low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage power management
applications. Users will also gain several other key benefits :
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Reduced component count
FEATURES
? Low On - Resistance
? Fast switching speed
? Low threshold
? Low gate drive
? 3mm x 2mm MLP
APPLICATIONS
? DC-DC Converters
? Power Management Functions
? Disconnection switches
? Motor Control
ORDERING INFORMATION
3x2mm Dual Die MLP
PINOUT
7
DEVICE
ZXMN2AM832TA
REEL
7 ’‘
TAPE
WIDTH
8mm
QUANTITY
PER REEL
3000 units
ZXMN2AM832TC
13’‘
8mm
10000 units
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
DNA
ISSUE 3 - JANUARY 2005
1
SEMICONDUCTORS
相关PDF资料 |
PDF描述 |
|---|---|
| ZXMN2AMCTA | MOSFET 2N-CH 20V 2.9A DFN |
| ZXMN2B01FTA | MOSFET N-CH 20V 2.1A SOT23-3 |
| ZXMN2B03E6TA | MOSFET N-CH 20V 4.3A SOT23-6 |
| ZXMN2B14FHTA | MOSFET N-CH 20V 3.5A SOT23-3 |
| ZXMN2F30FHTA | MOSFET N-CHAN 20V SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN2AM832TC | 制造商:ZETEX 制造商全称:ZETEX 功能描述:DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
| ZXMN2AMCTA | 功能描述:MOSFET 20V DUAL N-CH ENH 12V VGS 3.7 IDS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN2B01F | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:DIODES 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2. 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 20V, 2.4A, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:20V, On Resistance Rds(on):100mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1V, No. of Pins:3 , RoHS Compliant: Yes 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23, Transistor Polarity:N Channel, Continuous Drain Current Id:2. |
| ZXMN2B01FTA | 功能描述:MOSFET 20V N-Channel MOSFET w/low gate drive cap RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN2B03E6 | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23-6 |
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