- 您现在的位置：买卖IC网 > PDF目录18774 > ZXMN3B04N8TA (Diodes Inc)MOSFET N-CH 30V 8.9A 8-SOIC PDF资料下载
参数资料
| 型号： | ZXMN3B04N8TA |
| 厂商： | Diodes Inc |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8.9A 8-SOIC |
| 产品目录绘图： | SO-8 |
| 其它图纸： | SO-8 Single Pin Out |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 7.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2480pF @ 15V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 产品目录页面： | 1472 (CN2011-ZH PDF) |
| 其它名称： | ZXMN3B04N8DKR |
ZXMN3B04N8
PACKAGE OUTLINE
D
P IN 1
C
S EATING P LANE
B
E
Controlling dimensions are in inches. Approximate conversions are given in millimeters
PACKAGE DIMENSIONS
DIM
Inches
Millimeters
DIM
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
A
0.053
0.069
1.35
1.75
e
0.050 BSC
1.27 BSC
A1
D
H
E
0.004
0.189
0.228
0.150
0.010
0.197
0.244
0.157
0.10
4.80
5.80
3.80
0.25
5.00
6.20
4.00
b
c
h
0.013
0.008
0
0.010
0.020
0.010
8
0.020
0.33
0.19
0
0.25
0.51
0.25
8
0.50
L
0.016
0.050
0.40
1.27
? Zetex Semiconductors plc 2004
Europe
Zetex GmbH
Streitfeldstra?e 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 2 - MAY 2004
7
SEMICONDUCTORS
相关PDF资料 |
PDF描述 |
|---|---|
| MTCBA-C1X-N3-NAM | MODEM CDMA FOR VERIZON NETWORKS |
| VIPER-S4 | REMOTE CONTROL SYSTEM FM 4CH |
| 94MT80KB | RECT BRIDGE 800V 90A INT-A-PAK |
| 94MT160KB | RECT BRIDGE 1600V 90A INT-A-PAK |
| XEB09-CISA | XPRESS ETHERNET BRIDGE, SINGLE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ZXMN3B04N8TC | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN3B14F | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14F(2) | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| ZXMN3B14F_06 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE |
| ZXMN3B14FTA | 功能描述:MOSFET 30V N Chnl UMOS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。