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| 型号： | ZXMN6A09DN8TC |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET DUAL N-CHAN 60V 8SOIC |
| 标准包装： | 2,500 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 8.2A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 24.2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 1407pF @ 40V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
ZXMN6A08E6
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
(Note 6)
Symbol
V DSS
V GS
Value
60
± 20
3.5
Unit
V
V
Continuous Drain Current
V GS = 10V
T A = +70°C (Note 6)
I D
2.8
A
(Note 5)
2.8
Pulsed Drain Current
V GS = 10V
(Note 7)
I DM
16
A
Continuous Source Current (Body diode)
Pulsed Source Current (Body diode)
(Note 6)
(Note 7)
I S
I SM
2.6
16
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
P D
R θ JA
T J , T STG
1.1
8.8
1.7
13.6
113
73
-55 to +150
W
mW/°C
°C/W
°C
Notes:
5. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. Same as note (5), except the device is measured at t ≤ 10 sec.
7. Same as note (5), except the device is pulsed with D = 0.02 and pulse width 300μs. The pulse current is limited by the maximum junction temperature.
ZXMN6A08E6
Document Number DS33376 Rev. 7 - 2
2 of 8
www.diodes.com
December 2013
? Diodes Incorporated
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| ZXMN6A09DN8TCA | 功能描述:MOSFET 60V N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| ZXMN6A09G | 制造商:Diodes Incorporated 功能描述: |
| ZXMN6A09G(1) | 制造商:ZETEX 制造商全称:ZETEX 功能描述: |
| ZXMN6A09G_07 | 制造商:ZETEX 制造商全称:ZETEX 功能描述:60V SOT223 N-channel enhancement mode MOSFET |
| ZXMN6A09GTA | 功能描述:MOSFET N-Ch 60V 7.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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