参数资料
型号: 18448
英文描述: Microprocessor Family CPU Thermal Management Application Note? 126KB (PDF)
中文描述: 微处理器系列CPU散热管理应用笔记? 126KB(PDF格式)
文件页数: 9/10页
文件大小: 126K
代理商: 18448
AMD
8
CPU Thermal Management
and therefore:
For this example, the package material thermal conduc-
tivity equals 0.1524 W/
°C-in and the thickness of 0.1
inches (100 mils). The heat source (i.e., the die) is 160
mils x 160 mils.
Continuing to determine the total thermal resistance, the
resistance of the die and adhesive is calculated.
Silver-filled conductive epoxy of thickness 1.0 mil, hav-
ing a thermal conductivity of 0.0063 W/
°C-in is used.
Again, the heat source is the die of the side dimension
160 mils; however, the spread angle of the heat through
epoxy is 0°. Thus,
The thermal conductivity of silicon is 3.27 W/
°C-in; die
thickness is 20 mils and the heat source is the sum of
the collector junction region totaling a dimension of ap-
proximately 10 mils.
θ
xK
a a
2x
+
()
[]
=
θpkg
1
0.1524 0.16
0.16
2
0.1
()
+
()
[]
--------------------------------------------------------------------------------
11.39
°CW
==
θepoxy
0.001
0.0063
()
0.16
()2
---------------------------------------------
6.20
=
°CW
=
θdie
0.02
3.27 0.01
()
0.01
2
0.02
()
+
()
[]
----------------------------------------------------------------------------------
12.23
°CW
==
Therefore:
A more accurate calculation of
θjc would also include
the lead frame and wire bonding thermal resistances as
described in Figure 11.
The graphs in Figure 12 illustrate how thermal resis-
tance varies with package area and die size. All values
were calculated as described above using the dimen-
sions of LCC packages and associated die.
Thermal Properties of Materials
Several factors affect the thermal resistance of an IC
package. Package variables include leadframe material
and construction, case material and construction, and
die attach method and material.
Accurate information on thermal properties of materials
is not readily available. The thermal conductivity of ce-
ramics, for example, is dependent on the purity of the
material, and that of silicon is dependent on tempera-
ture.
θ
die
θ
epoxy
θ
pkg
++
12.23
°C W 6.20°CW
11.39
°CW
++
=
θtotal 29.82°CW
=
R die
R epoxy
R lead frame 1
R lead frame 2
R pkg 1
R pkg 2
R socket
R wire
6
5
4
3
8
7
2
1
Nodes:
1. collector junction
2. within die under junction
3. lead frame surface
4. lead frame periphery
5. lead frame finger
6. ambient
7. bond pads
8. package bosy
Bond wire
Die
Silver Epoxy
Lead frame
Package body
Lead frame finger
Figure 11. Total Thermal Resistance
APPENDIX
相关PDF资料
PDF描述
1845E Optoelectronic
1845G Optoelectronic
1845H Optoelectronic
1847E Optoelectronic
1847G Optoelectronic
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