参数资料
型号: 1N5225B
厂商: NXP SEMICONDUCTORS
元件分类: 齐纳二极管
英文描述: Voltage regulator diodes
中文描述: 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封装: HERMETIC SEALED, GLASS PACKAGE-2
文件页数: 3/7页
文件大小: 37K
代理商: 1N5225B
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
3
Parameter
Symbol
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
Tstg
Viso
Ratings
VCC(PROT)
800
1000
–40 ~ +125
2500
Unit
V
°C
Vrms
V
VD = 13.5 ~ 16.5V
Inverter Part, Tj = +125
°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
2.15
2.35
3.3
2.0
0.8
1.0
2.8
1.2
1
10
Min.
Typ.
Max.
Collector-Emitter Saturation
Voltage
Collector-Emitter Cutoff
Current
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2)
Tj = 25
°C
Tj = 125
°C
ELECTRICAL CHARACTERISTICS (Tj = 25
°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol
Condition
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
0.3
1.65
1.85
2.3
0.8
0.3
0.4
1.2
0.4
Tj = 25
°C
Tj = 125
°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 0V
15V
VCC = 600V, IC = 75A
Tj = 125
°C
Inductive Load
(Fig. 3,4)
VCE = VCES, VD = 15V
(Fig. 5)
VD = 15V, IC = 75A
VCIN = 0V, Pulsed
(Fig. 1)
TOTAL SYSTEM
V
mA
V
s
Unit
0.21
0.36
0.27
0.47
0.038
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Inverter IGBT part (per 1 element)
(Note-1)
Inverter FWDi part (per 1 element)
(Note-1)
Brake IGBT part
(Note-1)
Brake FWDi upper part
(Note-1)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
Symbol
Condition
Unit
Min.
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-1) TC (under the chip) measurement point is below.
Parameter
Limits
Typ.
Max.
UP
IGBT
27.8
–8.0
VP
WP
UN
VN
WN
BR
FWDi
27.8
1.0
IGBT
65.4
–8.0
FWDi
65.4
1.0
IGBT
87.4
–8.0
FWDi
87.4
1.0
IGBT
38.7
7.6
FWDi
38.7
–1.4
IGBT
54.5
7.6
FWDi
54.5
–1.4
IGBT
76.5
7.6
FWDi
76.5
–1.4
IGBT
18.5
–9.9
Di
18.5
5.4
arm
axis
X
Y
(unit : mm)
Bottom view
* If you use this value, Rth(f-a) should be measured just under the chips.
相关PDF资料
PDF描述
1N5226B Voltage regulator diodes
1N5228B Voltage regulator diodes
1N5229 surface mount silicon Zener diodes
1N5232B Voltage regulator diodes
1N5235B Voltage regulator diodes
相关代理商/技术参数
参数描述
1N5225B (DO-35) 制造商:Aeroflex 功能描述:COMMERCIAL ZENER VOLTAGE REGUL 制造商:Aeroflex / Metelics 功能描述:COMMERCIAL ZENER VOLTAGE REGULATOR DIODE - Bulk 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-35 SD - Bulk
1N5225B _AY _10001 制造商:PanJit Touch Screens 功能描述:
1N5225B A0G 功能描述:DIODE ZENER 3V 500MW DO35 制造商:taiwan semiconductor corporation 系列:- 包装:带盒(TB) 零件状态:在售 电压 - 齐纳(标称值)(Vz):3V 容差:±5% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):29 Ohms 不同?Vr 时的电流 - 反向漏电流:50μA @ 1V 不同 If 时的电压 - 正向(Vf:1.1V @ 200mA 工作温度:100°C(TJ) 安装类型:通孔 封装/外壳:DO-204AH,DO-35,轴向 供应商器件封装:DO-35 标准包装:5,000
1N5225B BK 功能描述:DIODE ZENER 3V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:有效 电压 - 齐纳(标称值)(Vz):3V 容差:±5% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):29 欧姆 不同?Vr 时的电流 - 反向漏电流:50μA @ 1V 不同 If 时的电压 - 正向(Vf):1.1V @ 200mA 工作温度:-65°C ~ 200°C 安装类型:通孔 封装/外壳:DO-204AH,DO-35,轴向 供应商器件封装:DO-35 标准包装:2,500
1N5225B TR 功能描述:DIODE ZENER 3V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:剪切带(CT) 零件状态:有效 电压 - 齐纳(标称值)(Vz):3V 容差:±5% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):29 欧姆 不同?Vr 时的电流 - 反向漏电流:50μA @ 1V 不同 If 时的电压 - 正向(Vf):1.1V @ 200mA 工作温度:-65°C ~ 200°C 安装类型:通孔 封装/外壳:DO-204AH,DO-35,轴向 供应商器件封装:DO-35 标准包装:1