参数资料
型号: 1N5225B
厂商: NXP SEMICONDUCTORS
元件分类: 齐纳二极管
英文描述: Voltage regulator diodes
中文描述: 3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
封装: HERMETIC SEALED, GLASS PACKAGE-2
文件页数: 6/7页
文件大小: 37K
代理商: 1N5225B
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75RL1A120
FLAT-BASE TYPE
INSULATED PACKAGE
May 2009
6
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8s, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.
OUT
Si
OT
GND
In
Vcc
U
V
W
B
N
P
M
IF
+
: Interface which is the same as the U-phase
OUT
Si
GND
In
Vcc
OUT
Si
GND
In
Vcc
OUT
Si
GND
In
Fo
Vcc
OUT
Si
GND
In
Fo
Vcc
OUT
Si
GND
In
Fo
Vcc
VWP1
WP
VWPC
UN
VN
VN1
WN
VNC
1.5k
Fo
VVP1
VP
VVPC
≥0.1
4.7k
1k
≥0.1
20k
≥10
20k
≥10
≥0.1
VFo
WFo
UFo
VUP1
UP
VUPC
Br
IF
5V
IF
OUT
Si
GND
In
Fo
Vcc
VD
Fig. 8 Application Example Circuit
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相关代理商/技术参数
参数描述
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1N5225B _AY _10001 制造商:PanJit Touch Screens 功能描述:
1N5225B A0G 功能描述:DIODE ZENER 3V 500MW DO35 制造商:taiwan semiconductor corporation 系列:- 包装:带盒(TB) 零件状态:在售 电压 - 齐纳(标称值)(Vz):3V 容差:±5% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):29 Ohms 不同?Vr 时的电流 - 反向漏电流:50μA @ 1V 不同 If 时的电压 - 正向(Vf:1.1V @ 200mA 工作温度:100°C(TJ) 安装类型:通孔 封装/外壳:DO-204AH,DO-35,轴向 供应商器件封装:DO-35 标准包装:5,000
1N5225B BK 功能描述:DIODE ZENER 3V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:散装 零件状态:有效 电压 - 齐纳(标称值)(Vz):3V 容差:±5% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):29 欧姆 不同?Vr 时的电流 - 反向漏电流:50μA @ 1V 不同 If 时的电压 - 正向(Vf):1.1V @ 200mA 工作温度:-65°C ~ 200°C 安装类型:通孔 封装/外壳:DO-204AH,DO-35,轴向 供应商器件封装:DO-35 标准包装:2,500
1N5225B TR 功能描述:DIODE ZENER 3V 500MW DO35 制造商:central semiconductor corp 系列:- 包装:剪切带(CT) 零件状态:有效 电压 - 齐纳(标称值)(Vz):3V 容差:±5% 功率 - 最大值:500mW 阻抗(最大值)(Zzt):29 欧姆 不同?Vr 时的电流 - 反向漏电流:50μA @ 1V 不同 If 时的电压 - 正向(Vf):1.1V @ 200mA 工作温度:-65°C ~ 200°C 安装类型:通孔 封装/外壳:DO-204AH,DO-35,轴向 供应商器件封装:DO-35 标准包装:1