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参数资料
| 型号： | 1N5820G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 103K |
| 代理商： | 1N5820G |
1N5820, 1N5821, 1N5822
http://onsemi.com
4
NOTE 3 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V
RWM
. Proper derating may be
accomplished by use of equation (1).
T
A(max)
= T
J(max)
R
JA
P
F(AV)
where T
A(max)
= Maximum allowable ambient temperature
T
J(max)
= Maximum allowable junction temperature
(125
°
C or the temperature at which thermal
runaway occurs, whichever is lowest)
P
F(AV)
= Average forward power dissipation
P
R(AV)
= Average reverse power dissipation
R
JA
= Junctiontoambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
T
R
= T
J(max)
R
JA
P
R(AV)
R
JA
P
R(AV)
(1)
(2)
Substituting equation (2) into equation (1) yields:
T
A(max)
= T
R
R
JA
P
F(AV)
Inspection of equations (2) and (3) reveals that T
R
is the
ambient temperature at which thermal runaway occurs or
where T
J
= 125
°
C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115
°
C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
(3)
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
V
R(equiv)
= V
(FM)
F
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find T
A(max)
for 1N5821 operated in a
12volt dc supply using a bridge circuit with capacitive filter
such that I
DC
= 2.0 A (I
F(AV)
= 1.0 A), I
(FM)
/I
(AV)
= 10, Input
Voltage = 10 V
(rms)
, R
JA
=
40
°
C/W.
Step 1. Find V
R(equiv).
Read F = 0.65 from Table 1,
V
R(equiv)
= (1.41) (10) (0.65) = 9.2 V.
Step 2. Find T
R
from Figure 2. Read T
R
= 108
°
C
@ V
R
= 9.2 V and R
JA
= 40
°
C/W.
Step 3. Find P
F(AV)
from Figure 6. **Read P
F(AV)
= 0.85 W
@I(FM)
I(AV)
Step 4. Find T
A(max)
from equation (3).
T
A(max)
= 108
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBRprefix devices, using P
F(AV)
from Figure 6.
(4)
10and IF(AV)
1.0 A.
(0.85) (40) = 74
°
C.
Table 1. Values for Factor F
Circuit
Half Wave
Full Wave, Bridge
Full Wave,
Center Tapped
*
Load
Resistive
Capacitive*
Resistive
Capacitive
Resistive
Capacitive
Sine Wave
0.5
1.3
0.5
0.65
1.0
1.3
Square Wave
0.75
1.5
0.75
0.75
1.5
1.5
*Note that V
R(PK)
Use line to center tap voltage for V
in.
2.0 V
in(PK)
.
相关PDF资料 |
PDF描述 |
|---|---|
| 1N5820RLG | Axial Lead Rectifiers |
| 1N5821G | Axial Lead Rectifiers |
| 1N5821RLG | Axial Lead Rectifiers |
| 1N5822G | Axial Lead Rectifiers |
| 1N5822RLG | Axial Lead Rectifiers |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5820-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| 1N5820G | 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 3A 20V DO-201AD 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 3A 20V DO-201AD |
| 1N5820H | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| 1N5820HA0G | 功能描述:DIODE SCHOTTKY 20V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:带盒（TB） 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:20V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:475mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 20V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
| 1N5820HB0G | 功能描述:DIODE SCHOTTKY 20V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:20V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:475mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 20V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
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