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参数资料
| 型号： | 1N5820G |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 参考电压二极管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封装： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件页数： | 5/8页 |
| 文件大小： | 103K |
| 代理商： | 1N5820G |
1N5820, 1N5821, 1N5822
http://onsemi.com
5
Figure 1. Maximum Reference Temperature
1N5820
Figure 2. Maximum Reference Temperature
1N5821
Figure 3. Maximum Reference Temperature
1N5822
Figure 4. SteadyState Thermal Resistance
15
2.0
V
R
, REVERSE VOLTAGE (VOLTS)
115
125
105
30
4.0
V
R
, REVERSE VOLTAGE (VOLTS)
125
115
105
95
85
75
L, LEAD LENGTH (INCHES)
1/8
0
25
20
15
10
5.0
0
2/8
40
TR
T
R
RJ
95
85
75
5.0
3.0
4.0
7.0
10
20
°
5.0
7.0
10
15
20
3/8
4/8
5/8
6/8
7/8
1.0
40
35
30
J
°
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
,
°
R
JA
(
°
C/W) = 70
50
40
28
20
15
10
8.0
15
V
R
, REVERSE VOLTAGE (VOLTS)
115
105
TR
95
85
75
5.0
3.0
4.0
7.0
10
20
°
R
JA
(
°
C/W) = 70
50
40
28
20
15
10
8.0
125
30
R
JA
(
°
C/W) = 70
50
40
28
20
15
10
8.0
r
(
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.5
0.3
0.2
1.0
LEAD LENGTH = 1/4
″
P
pk
P
pk
t
p
t
1
TIME
DUTY CYCLE = t
p
/t
1
PEAK POWER, P
pk
, is peak of an
equivalent square power pulse.
T
JL
= P
pk
R
JL
[D + (1 D)
r(t
1
+ t
p
) + r(t
p
) r(t
1
)] where:
T
JL
= the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t
1
+ t
p
) = normalized value of transient thermal resistance at time
t
1
+ t
p
, etc.
Figure 5. Thermal Response
20 k
The temperature of the lead should be measured using a ther-
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steadystate conditions are achieved. Using the measured val-
ue of T
L
, the junction temperature may be determined by:
T
J
= T
L
+ T
JL
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 1N5820-G | 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| 1N5820G | 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER 3A 20V DO-201AD 制造商:ON Semiconductor 功能描述:SCHOTTKY RECTIFIER, 3A 20V DO-201AD |
| 1N5820H | 制造商:PANJIT 制造商全称:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| 1N5820HA0G | 功能描述:DIODE SCHOTTKY 20V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:带盒（TB） 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:20V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:475mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 20V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
| 1N5820HB0G | 功能描述:DIODE SCHOTTKY 20V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级，AEC-Q101 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向（Vr）（最大值）:20V 电流 - 平均整流（Io）:3A 不同 If 时的电压 - 正向（Vf:475mV @ 3A 速度:快速恢复 = 200mA（Io） 不同?Vr 时的电流 - 反向漏电流:500μA @ 20V 不同?Vr，F 时的电容:200pF @ 4V，1MHz 安装类型:通孔 封装/外壳:DO-201AD，轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500 |
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