参数资料
型号: 1N5822G
厂商: ON Semiconductor
文件页数: 6/8页
文件大小: 123K
描述: DIODE SCHOTTKY 3A 40V DO-201AD
产品目录绘图: Rectifier DO-201AD Pkg
标准包装: 500
二极管类型: 肖特基
电压 - (Vr)(最大): 40V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 525mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 2mA @ 40V
安装类型: 通孔
封装/外壳: DO-201AA,DO-27,轴向
供应商设备封装: DO-201AD
包装: 散装
产品目录页面: 1567 (CN2011-ZH PDF)
其它名称: 1N5822G-ND
1N5822GOS
1N5820, 1N5821, 1N5822
http://onsemi.com
6
0.7 1.0 7.0 103.0
0.1
IF(AV), AVERAGE FORWARD CURRENT (AMP)
10
7.0
5.0
0.7
0.5
0.1
5.0
P
0.2 0.3 0.5 2.0
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
3.0
2.0
1.0
0.3
0.2
Figure 6. Forward Power Dissipation 1N5820-22
dc
SQUARE WAVE
TJ
125
°C
SINE WAVE
I(FM)
I(AV)
Capacitive
Loads
5.0
10
20
TA(A)
TA(K)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
PD
RS(A)
RL(A)
RJ(A)
RJ(K)
RL(K)
RS(K)
NOTE 4 - APPROXIMATE THERMAL CIRCUIT MODEL
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
TA
= Ambient Temperature T
C
= Case Temperature
TL
= Lead Temperature T
J
= Junction Temperature
RS
= Thermal Resistance, Heatsink to Ambient
RL
= Thermal Resistance, Lead-to-Heatsink
RJ
= Thermal Resistance, Junction-to-Case
PD
= Total Power Dissipation = P
F
+ P
R
PF
= Forward Power Dissipation
PR
= Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides,
respectively.) Values for thermal resistance components
are:
RL
= 42
°C/W/in typically and 48°C/W/in maximum
RJ
= 10
°C/W typically and 16°C/W maximum
The maximum lead temperature may be found as follows:
TL
= T
J(max)
T
JL
where
T
JL
R
JL
· P
D
TYPICAL VALUES FOR
RJA
IN STILL AIR
Data shown for thermal resistance junction-to-ambient (RJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4
RJA
50 51 53 55
°C/W
°C/W
°C/W
58 59 61 63
28
NOTE 5 — MOUNTING DATA
Mounting Method 1
P.C. Board where available
copper surface is small.
Mounting Method 3
P.C. Board with
2-1/2, x 2-1/2,
copper surface.
BOARD GROUND
PLANE
VECTOR PUSH-IN
TERMINALS T-28
Mounting Method 2
LL
LL
L = 1/2″
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1N5822-G 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifier
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1N5822HA0G 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级,AEC-Q101 包装:带盒(TB) 零件状态:在售 二极管类型:肖特基 电压 - DC 反向(Vr)(最大值):40V 电流 - 平均整流(Io):3A 不同 If 时的电压 - 正向(Vf:525mV @ 3A 速度:快速恢复 = 200mA(Io) 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr,F 时的电容:200pF @ 4V,1MHz 安装类型:通孔 封装/外壳:DO-201AD,轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500
1N5822HB0G 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽车级,AEC-Q101 包装:散装 零件状态:在售 二极管类型:肖特基 电压 - DC 反向(Vr)(最大值):40V 电流 - 平均整流(Io):3A 不同 If 时的电压 - 正向(Vf:525mV @ 3A 速度:快速恢复 = 200mA(Io) 不同?Vr 时的电流 - 反向漏电流:500μA @ 40V 不同?Vr,F 时的电容:200pF @ 4V,1MHz 安装类型:通孔 封装/外壳:DO-201AD,轴向 供应商器件封装:DO-201AD 工作温度 - 结:-55°C ~ 125°C 标准包装:500