- 您现在的位置：买卖IC网 > PDF目录4236 > 25AA512T-I/SM (Microchip Technology)IC EEPROM 512KBIT 20MHZ 8SOIC PDF资料下载
参数资料
| 型号： | 25AA512T-I/SM |
| 厂商： | Microchip Technology |
| 文件页数： | 18/36页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 512KBIT 20MHZ 8SOIC |
| 标准包装： | 2,100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.209"，5.30mm 宽） |
| 供应商设备封装： | 8-SOIJ |
| 包装： | 带卷 (TR) |
| 其它名称： | 25AA512T-I/SMTR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页当前第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页
25AA512
2.11
DEEP POWER-DOWN MODE
Deep Power-Down mode of the 25AA512 is its lowest
power consumption state. The device will not respond
to any of the Read or Write commands while in Deep
Power-Down mode, and therefore it can be used as an
additional software write protection feature.
The Deep Power-Down mode is entered by driving CS
low, followed by the instruction code (Figure 2-11) onto
the SI line, followed by driving CS high.
If the CS pin is not driven high after the eighth bit of the
instruction code has been given, the device will not
execute Deep power-down. Once the CS line is driven
high there is a delay (T DP ) before the current settles to
its lowest consumption.
All instructions given during Deep Power-Down mode
are ignored except the Read Electronic Signature
command (RDID). The RDID command will release
the device from Deep power-down and outputs the
electronic signature on the SO pin, and then returns
the device to Standby mode after delay (T REL )
Deep Power-Down mode automatically releases at
device power-down. Once power is restored to the
device it will power-up in the Standby mode.
FIGURE 2-11:
DEEP POWER-DOWN SEQUENCE
CS
0
1
2
3
4
5
6
7
SCK
SI
1
0
1
1
1
0
0
1
High-Impedance
SO
DS22021F-page 18
? 2010 Microchip Technology Inc.
相关PDF资料 |
PDF描述 |
|---|---|
| SST39SF040-55-4C-WHE-T | IC MEM MPF 4MBIT FLASH 32TSOP |
| XCV200E-7FG456I | IC FPGA 1.8V I-TEMP 456-FBGA |
| SST39SF040-55-4C-WHE | IC FLASH MPF 4MBIT 55NS 32TSOP |
| SST39SF040-70-4I-WHE | IC FLASH MPF 4MBIT 70NS 32TSOP |
| SST26VF016-80-5I-QAE-T | IC FLSH SER 16MB 80MHZ SQI 8WSON |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 25AA640 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
| 25AA640/25LC640 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:25AA640/25LC640 |
| 25AA640/S | 功能描述:电可擦除可编程只读存储器 64k, 8K X 8 , 1.8V SER EE, DIE in WAFFLE PK RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 25AA640/W | 制造商:Microchip Technology Inc 功能描述:64K, 8K X 8 , 1.8V SER EE, WAFER - Gel-pak, waffle pack, wafer, diced wafer on film |
| 25AA640/WF | 制造商:Microchip Technology Inc 功能描述:64K, 8K X 8 , 1.8V SER EE, WA - Gel-pak, waffle pack, wafer, diced wafer on film |
发布紧急采购，3分钟左右您将得到回复。