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参数资料
| 型号： | 25AA512T-I/SM |
| 厂商： | Microchip Technology |
| 文件页数： | 9/36页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 512KBIT 20MHZ 8SOIC |
| 标准包装： | 2,100 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 512K (64K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.209"，5.30mm 宽） |
| 供应商设备封装： | 8-SOIJ |
| 包装： | 带卷 (TR) |
| 其它名称： | 25AA512T-I/SMTR |
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25AA512
2.2
Write Sequence
Note:
Page write operations are limited to writing
Prior to any attempt to write data to the 25AA512, the
write enable latch must be set by issuing the WREN
instruction (Figure 2-4). This is done by setting CS low
and then clocking out the proper instruction into the
25AA512. After all eight bits of the instruction are trans-
mitted, the CS must be brought high to set the write
enable latch. If the write operation is initiated immedi-
ately after the WREN instruction without CS being
brought high, the data will not be written to the array
because the write enable latch will not have been
properly set.
A write sequence includes an automatic, self timed
erase cycle. It is not required to erase any portion of the
memory prior to issuing a WRITE instruction.
Once the write enable latch is set, the user may
proceed by setting the CS low, issuing a WRITE instruc-
tion, followed by the 16-bit address, and then the data
to be written. Up to 128 bytes of data can be sent to the
device before a write cycle is necessary. The only
restriction is that all of the bytes must reside in the
same page.
bytes within a single physical page,
regardless of the number of bytes
actually being written. Physical page
boundaries start at addresses that are
integer multiples of the page buffer size (or
‘page size’), and end at addresses that are
integer multiples of page size – 1. If a
Page Write command attempts to write
across a physical page boundary, the
result is that the data wraps around to the
beginning of the current page (overwriting
data previously stored there), instead of
being written to the next page as might be
expected. It is therefore necessary for the
application software to prevent page write
operations that would attempt to cross a
page boundary.
For the data to be actually written to the array, the CS
must be brought high after the Least Significant bit (D0)
of the n th data byte has been clocked in. If CS is
brought high at any other time, the write operation will
not be completed. Refer to Figure 2-2 and Figure 2-3
Note:
When doing a write of less than 128 bytes
the data in the rest of the page is refreshed
along with the data bytes being written.
This will force the entire page to endure a
write cycle, for this reason endurance is
specified per page.
for more detailed illustrations on the byte write
sequence and the page write sequence, respectively.
While the write is in progress, the STATUS register may
be read to check the status of the WPEN, WIP, WEL,
BP1 and BP0 bits (Figure 2-6). A read attempt of a
memory array location will not be possible during a
write cycle. When the write cycle is completed, the
write enable latch is reset.
FIGURE 2-2:
CS
BYTE WRITE SEQUENCE
Twc
0
1
2
3
4
5
6
7
8
9 1 0 1 1
2 1 2 2 2 3 2 4 2 5 2 6 2 7 2 8 2 9 3 0 3 1
SCK
Instruction
16-bit Address
Data Byte
SI
0
0
0
0
0
0
1
0 15 14 13 12
2
1
0
7
6
5
4
3
2
1
0
High-Impedance
SO
? 2010 Microchip Technology Inc.
DS22021F-page 9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 25AA640 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:64K SPI Bus Serial EEPROM |
| 25AA640/25LC640 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:25AA640/25LC640 |
| 25AA640/S | 功能描述:电可擦除可编程只读存储器 64k, 8K X 8 , 1.8V SER EE, DIE in WAFFLE PK RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| 25AA640/W | 制造商:Microchip Technology Inc 功能描述:64K, 8K X 8 , 1.8V SER EE, WAFER - Gel-pak, waffle pack, wafer, diced wafer on film |
| 25AA640/WF | 制造商:Microchip Technology Inc 功能描述:64K, 8K X 8 , 1.8V SER EE, WA - Gel-pak, waffle pack, wafer, diced wafer on film |
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