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参数资料
| 型号： | 2N3773 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 205K |
| 代理商： | 2N3773 |
1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Power
Transistors
The 2N3773 and 2N6609 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications. These devices can
also be used in power switching circuits such as relay or solenoid drivers, dc to dc
converters or inverters.
High Safe Operating Area (100% Tested) 150 W @ 100 V
Completely Characterized for Linear Operation
High DC Current Gain and Low Saturation Voltage
hFE = 15 (Min) @ 8 A, 4 V
VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A
For Low Distortion Complementary Designs
*MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector Emitter Voltage
VCEO
140
Vdc
Collector–Emitter Voltage
VCEX
160
Vdc
Collector–Base Voltage
VCBO
160
Vdc
Emitter–Base Voltage
VEBO
7
Vdc
Collector Current — Continuous
— Peak (1)
IC
16
30
Adc
Base Current — Continuous
— Peak (1)
IB
4
15
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
150
0.855
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.17
_C/W
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
v 10%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N3773/D
Motorola, Inc. 1995
2N3773
2N6609
PNP
NPN
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY
POWER TRANSISTORS
140 VOLTS
150 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
REV 7
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6609 | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N3773 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3789X | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3773 LEADFREE | 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3773 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N3773/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Silicon Power Transistor |
| 2N3773_04 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| 2N3773_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High power NPN transistor |
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