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参数资料
| 型号： | 2N3773 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 205K |
| 代理商： | 2N3773 |
2N3773 2N6609
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (1)
*Collector–Emitter Breakdown Voltage
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
140
—
Vdc
*Collector–Emitter Sustaining Voltage
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
VCEX(sus)
160
—
Vdc
Collector–Emitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 Ohms)
VCER(sus)
150
—
Vdc
*Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
ICEO
—
10
mAdc
*Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
2
10
mAdc
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
—
2
mAdc
*Emitter Cutoff Current
(VBE = 7 Vdc, IC = 0)
IEBO
—
5
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
*(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
15
5
60
—
—
Collector–Emitter Saturation Voltage
*(IC = 8 Adc, IB = 800 mAdc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
—
1.4
4
Vdc
*Base–Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
—
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter
Small–Signal, Short–Circuit, Forward Current Transfer Ratio
(IC = 1 A, f = 50 kHz)
|hfe|
4
—
—
*Small–Signal Current Gain
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
40
—
—
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non–repetitive), VCE = 100 V, See Figure 12
IS/b
1.5
—
Adc
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle v 2%.
* Indicates JEDEC Registered Data.
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6609 | 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N3773 | 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N3789X | 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N3790 | 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N3773 LEADFREE | 功能描述:两极晶体管 - BJT NPN Power SW RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N3773 | 制造商:SPC Multicomp 功能描述:TRANSISTOR NPN TO-3 |
| 2N3773/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Complementary Silicon Power Transistor |
| 2N3773_04 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Complementary Silicon Power Transistors |
| 2N3773_08 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:High power NPN transistor |
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