参数资料
型号: 2N3773
厂商: MOTOROLA INC
元件分类: 功率晶体管
英文描述: 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
封装: TO-3, 2 PIN
文件页数: 4/6页
文件大小: 205K
代理商: 2N3773
2N3773 2N6609
4
Motorola Bipolar Power Transistor Device Data
30
3.0
Figure 7. Forward Bias Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20
10
5.0
3.0
2.0
1.0
0.5
0.03
5.0 7.0
10
20
30
50
300
BONDING WIRE LIMIT
THERMAL LIMIT
@ TC = 25°C, SINGLE PULSE
SECOND BREAKDOWN LIMIT
70
0.3
0.2
I C
,COLLECT
OR
CURRENT
(AMP)
dc
10
s
100
s
100 ms
0.1
0.05
100
200
40
s
200
s
1.0 ms
500 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation:
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 200
_C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100
80
60
40
0
20
0
40
80
120
160
200
Figure 8. Power Derating
TC, CASE TEMPERATURE (°C)
POWER
DERA
TING
F
ACT
OR
(%)
THERMAL
DERATING
相关PDF资料
PDF描述
2N6609 16 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N3773 16 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-3
2N3789X 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
2N3790 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
2N3790 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3
相关代理商/技术参数
参数描述
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