- 您现在的位置：买卖IC网 > PDF目录298296 > 2N5059 (AMERICAN MICROSEMICONDUCTOR INC) 150 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 PDF资料下载
参数资料
| 型号： | 2N5059 |
| 厂商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5 |
| 封装： | TO-5, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 233K |
| 代理商： | 2N5059 |
l
l
l
l
l
l
2N5059 Availability
Buy 2N5059 at our online store!
2N5059 Information
Category Transistors
2N5059 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 250
V(BR)CBO (V) : 250
I(C) Max. (A) : 150m
Absolute Max. Power Diss. (W) : 1.0
Maxim um Operating Tem p (шC) : 175ю
I(CBO) Max. (A) : 50nШ
@V(CBO) (V) (Test Condition) :
V(CE)sat Max. (V) :
@I(C) (A) (Test Condition) :
@I(B) (A) (Test Condition) :
h(FE) Min. Current gain. : 30
h(FE) Max. Current gain. : 150
@I(C) (A) (Test Condition) : 30m
@V(CE) (V) (Test Condition) : 25
f(T) Min. (Hz) Transition Freq : 30M
@I(C) (A) (Test Condition) :
@V(CE) (V) (Test Condition) :
t(d) Max. (s) Delay tim e. :
t(r) Max. (s) Rise tim e :
t(on) Max. (s) On tim e. :
t(s) Max. (s) Storage tim e. :
t(f) Max. (s) Fall tim e. :
t(off) Max. (s) Off tim e :
Package Style : TO-5
Mounting Style : T
Search Datasheets by Partnumber:
Or Browse Datasheets by Product Type:
Special Offers:
FREE UPS Ground Shipping on Orders above $150.00
Lanuage Translator:
Did you Know...
AMS has m ore than 17,000,000 electronic com ponents sitting on our warehouse shelves? With that kind of inventory, we can alm ost guarantee
that we've got the right part for the job! To find out for yourself, give us a call today: (973) 377-9566!
133 Kings Road, Madison, NJ 07940 USA (973) 377-9566 / Fax: (973) 377-3078
Copyright 2004 A merican Microsemiconductor Inc. A ll Rights Reserved.
Enter Your Part #
Type your question
here and click below ...
Submit
Continue
Diodes
Continue
Spanish
相关PDF资料 |
PDF描述 |
|---|---|
| 2N5627.MOD | 10 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
| 2N5683 | 50 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AE |
| 2N5684 | 50 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 |
| 2N5805 | 5 A, 375 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N5883.MOD | 25 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5060 | 功能描述:SCR 0.8A 30V RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| 2N5060/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Sensitive Gate Silicon Controlled Rectifiers |
| 2N5060G | 功能描述:SCR THY 0.8A 30V SCR RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| 2N5060RL1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| 2N5060RLRA | 功能描述:SCR 30V 800mA RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。