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参数资料
| 型号： | 2N5551D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 5/12页 |
| 文件大小： | 712K |
| 代理商： | 2N5551D26Z |
3
2N5551
/
MMBT5551
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
SMALL SIGNAL CHARACTERISTICS
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
160
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
180
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
6.0
V
ICBO
Collector Cutoff Current
VCB = 120 V, IE = 0,
VCB = 120 V, IE = 0, TA = 100
°C
50
nA
A
IEBO
Emitter Cutoff Current
VEB = 4.0 V, IC = 0
50
nA
hFE
DC Current Gain
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
80
30
250
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
0.15
0.20
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
1.0
V
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
100
300
MHz
Cobo
Output Capacitance
VCB = 10 V, IE = 0,
f = 1.0 MHz
6.0
pF
Cibo
Input Capacitance
VBE = 0.5 V, IC = 0,
f = 1.0 MHz
20
pF
hfe
Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V,
f = 1.0 kHz
50
250
NF
Noise Figure
IC = 250
A, V
CE = 5.0 V,
RS=1.0 k
, f=10 Hz to 15.7 kHz
8.0
dB
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤2.0%
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
NPN General Purpose Amplifier
(continued)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N5551DCSM | 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed |
| 2N5551G | 功能描述:两极晶体管 - BJT 600mA 180V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2N5551G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 160V TO-92 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 160V TO-92 |
| 2N5551HR | 制造商:STMicroelectronics 功能描述:SMALL SIGNAL TRANSISTORNPN600MA VCEO=160VOLTSTO-39 SOLDER DI - Bulk |
| 2N5551IUTA | 功能描述:功率放大器 TO-92 RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: |
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