参数资料
型号: 2N5551D26Z
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: 小信号晶体管
英文描述: 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件页数: 7/12页
文件大小: 712K
代理商: 2N5551D26Z
3
2N5551
/
MMBT5551
NPN General Purpose Amplifier
(continued)
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P
-
POW
E
R
DI
SSI
P
A
T
IO
N
(m
W
)
D
o
TO-92
SOT-23
Input and Output Capacitance
vs Reverse Voltage
0.1
1
10
100
0
5
10
15
20
25
30
V
- COLLECTOR VOLTAGE (V)
C
A
P
A
C
IT
A
N
C
E
(
pF)
C
f = 1.0 MHz
CE
C
cb
ib
Small Signal Current Gain
vs Collector Current
110
50
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h
-
S
M
A
L
S
IG
N
A
L
C
U
R
E
N
T
GA
IN
C
FE
FREG = 20 MHz
V
= 10V
CE
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2N5551HR 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-18
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相关代理商/技术参数
参数描述
2N5551DCSM 制造商:SEME-LAB 制造商全称:Seme LAB 功能描述:Dual Bipolar NPN Devices in a hermetically sealed
2N5551G 功能描述:两极晶体管 - BJT 600mA 180V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N5551G 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 160V TO-92 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 160V TO-92
2N5551HR 制造商:STMicroelectronics 功能描述:SMALL SIGNAL TRANSISTORNPN600MA VCEO=160VOLTSTO-39 SOLDER DI - Bulk
2N5551IUTA 功能描述:功率放大器 TO-92 RoHS:否 制造商:TriQuint Semiconductor 封装 / 箱体: 工作电源电压:28 V 电源电流:2.5 A 工作温度范围: 封装: