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参数资料
型号： 2N6109AJ
厂商： ON SEMICONDUCTOR
元件分类： 功率晶体管
英文描述： 7 A, 50 V, PNP, Si, POWER TRANSISTOR
封装： TO-220AB, 3 PIN
文件页数： 12/60页
文件大小： 371K
代理商： 2N6109AJ
2N6107 2N6109 2N6111 2N6288 2N6292
3–102
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
2N6111, 2N6288
2N6109
2N6107, 2N6292
VCEO(sus)
30
50
70
—
Vdc
Collector Cutoff Current
(VCE = 20 Vdc, IB = 0)
2N6111, 2N6288
(VCE = 40 Vdc, IB = 0)
2N6109
(VCE = 60 Vdc, IB = 0)
2N6107, 2N6292
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB(off) = 1.5 Vdc)
2N6111, 2N6288
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6109
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6107, 2N6292
(VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6111, 2N6288
(VCE = 50 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6109
(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6107, 2N6292
ICEX
—
100
2.0
Adc
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc)
2N6107, 2N6292
(IC = 2.5 Adc, VCE = 4.0 Vdc)
2N6109
(IC = 3.0 Adc, VCE = 4.0 Vdc)
2N6111, 2N6288
(IC = 7.0 Adc, VCE = 4.0 Vdc)
All Devices
hFE
30
2.3
150
—
—
Collector–Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 3.0 Adc)
VCE(sat)
—
3.5
Vdc
Base–Emitter On Voltage
(IC = 7.0 Adc, VCE = 4.0 Vdc)
VBE(on)
—
3.0
Vdc
DYNAMIC CHARACTERISTICS
Current Gain — Bandwidth Product (2)
(IC = 500 mAdc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
2N6288, 92
2N6107, 09, 11
fT
4.0
10
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
250
pF
Small–Signal Current Gain (IC = 0.5 Adc, VCE = 4.0 Vdc, f = 50 kHz)
hfe
20
—
—
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = |hfe| ftest.
Figure 2. Switching Time Test Circuit
+11 V
25
s
0
– 9.0 V
RB
–4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
51
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
RB and RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
2.0
0.07
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
1.0
0.7
0.5
0.3
0.2
0.1
0.02
0.1
0.2
0.3
0.5
2.0
3.0
7.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
0.05
t,TIME
(
s)
tr
1.0
5.0
td @ VBE(off) ≈ 5.0 V
0.07
0.03
相关PDF资料
PDF描述
2N6288AK 7 A, 30 V, NPN, Si, POWER TRANSISTOR
2N6111DW 7 A, 30 V, PNP, Si, POWER TRANSISTOR
2N6292AN 7 A, 70 V, NPN, Si, POWER TRANSISTOR
2N6292AS 7 A, 70 V, NPN, Si, POWER TRANSISTOR
2N6288AS 7 A, 30 V, NPN, Si, POWER TRANSISTOR
相关代理商/技术参数
参数描述
2N6109G 功能描述:两极晶体管 - BJT 7A 50V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6110 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors
2N6111 功能描述:两极晶体管 - BJT PNP Medium Power RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2N6111_03 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:SILICON PNP SWITCHING TRANSISTOR
2N6111G 功能描述:两极晶体管 - BJT 7A 30V 40W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
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