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参数资料
| 型号： | 2N6283 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 214K |
| 代理商： | 2N6283 |
1
Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low–frequency switching applica-
tions.
High DC Current Gain @ IC = 10 Adc —
hFE = 2400 (Typ) — 2N6282, 2N6283, 2N6284
hFE = 4000 (Typ) — 2N6285, 2N6286, 2N6287
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) — 2N6282, 2N6285
VCEO(sus) = 80 Vdc (Min) — 2N6283, 2N6286
VCEO(sus) = 100 Vdc (Min) — 2N6284, 2N6287
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
*MAXIMUM RATINGS
Rating
Symbol
2N6282
2N6285
2N6283
2N6286
2N6284
2N6287
Unit
Collector–Emitter Voltage
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25
_C
PD
160
0.915
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ,Tstg
– 65 to + 200
_C
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
1.09
_C/W
* Indicates JEDEC Registered Data.
25
50
100
125
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
160
60
40
140
0
75
150
0
20
80
100
120
175
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6282/D
Motorola, Inc. 1995
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
2N6282
thru
2N6284
2N6285
thru
2N6287
*Motorola Preferred Device
*
CASE 1–07
TO–204AA
(TO–3)
NPN
PNP
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6284 | 20 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6301 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257 |
| 2N6313 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6316 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6323 | 30 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6284 | 功能描述:达林顿晶体管 NPN Darlington Sw RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6284/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power Darlington transistors |
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