- 您现在的位置：买卖IC网 > PDF目录55783 > 2N6283 (MOTOROLA INC) 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA PDF资料下载
参数资料
| 型号： | 2N6283 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 2/6页 |
| 文件大小： | 214K |
| 代理商： | 2N6283 |
2N6282 thru 2N6284 2N6285 thru 2N6287
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
VCEO(sus)
60
80
100
—
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N6282, 2N6285
(VCE = 40 Vdc, IB = 0)
2N6283, 2N6286
(VCE = 50 Vdc, IB = 0)
2N6284, 2N6287
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
0.5
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
hFE
750
100
18,000
—
—
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
—
2.0
3.0
Vdc
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
—
2.8
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
—
4.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6282,83,84
2N6285,86,87
Cob
—
400
600
pF
Small–Signal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
—
—
* Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300
s, Duty Cycle = 2%
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t,
TIME
(
s)
7.0
2.0
1.0
0.7
0.5
0.1
0.3
0.7
3.0
20
0.2
1.0
5.0
0.3
3.0
5.0
0.5
2.0
7.0
0
VCC
– 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
– 12 V
[ 8.0 k
[ 50
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
RB
10
td @ VBE(off) = 0 V
tf
ts
tr
2N6282/84 (NPN)
2N6285/87 (PNP)
VCC = 30 Vdc
IC/IB = 250
IB1 = IB2
TJ = 25°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6284 | 20 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6301 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257 |
| 2N6313 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6316 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6323 | 30 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6284 | 功能描述:达林顿晶体管 NPN Darlington Sw RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6284/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power Darlington transistors |
发布紧急采购，3分钟左右您将得到回复。