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参数资料
| 型号： | 2N6283 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 214K |
| 代理商： | 2N6283 |
2N6282 thru 2N6284 2N6285 thru 2N6287
5
Motorola Bipolar Power Transistor Device Data
+ 5.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
1.0
2.0 3.0
5.0 7.0
20
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
+ 4.0
+ 3.0
+ 1.0
0
– 4.0
– 1.0
– 2.0
– 3.0
– 5.0
θVB for VBE
*
θVC for VCE(sat)
– 55
°C to + 25°C
25
°C to 150°C
25
°C to + 150°C
0.5
0.7
+ 5.0
IC, COLLECTOR CURRENT (AMP)
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
+ 4.0
+ 3.0
+ 1.0
0
– 4.0
– 1.0
– 2.0
– 3.0
– 5.0
θVB for VBE
*
θVC for VCE(sat)
NPN
2N6282, 2N6283, 2N6284
PNP
2N6285, 2N6286, 2N6287
*APPLIES FOR IC/IB ≤
hFE @ VCE + 3.0 V
250
– 55
°C to + 25°C
*APPLIES FOR IC/IB ≤
hFE @ VCE + 3.0 V
250
– 55
°C to + 25°C
25
°C to 150°C
25
°C to + 150°C
– 55
°C to + 25°C
10
0.2 0.3
1.0
2.0
3.0
5.0 7.0
20
0.5
0.7
10
+ 2.0
REVERSE
FORWARD
105
Figure 14. Collector Cut–Off Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
102
101
100
,COLLECT
OR
CURRENT
(
A)
I C
10–1
– 0.2 – 0.4
0
+ 0.2
+ 0.4
+ 0.6
VCE = 30 V
TJ = 150°C
100
°C
25
°C
REVERSE
FORWARD
103
104
– 0.6 – 0.8
– 1.0 – 1.2 – 1.4
103
VBE, BASE–EMITTER VOLTAGE (VOLTS)
100
10–1
10–2
,COLLECT
OR
CURRENT
(
A)
I C
10–3
101
102
+ 0.2 + 0.4
0
– 0.2
– 0.4
– 0.6
+ 0.6 + 0.8
+ 1.0 + 1.2 + 1.4
VCE = 30 V
TJ = 150°C
100
°C
25
°C
Figure 15. Darlington Schematic
NPN
2N6282
2N6283
2N6284
PNP
2N6285
2N6286
2N6287
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 60
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 60
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6284 | 20 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6301 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257 |
| 2N6313 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6316 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6323 | 30 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6284 | 功能描述:达林顿晶体管 NPN Darlington Sw RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6284/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power Darlington transistors |
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