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参数资料
| 型号： | 2N6283 |
| 厂商： | MOTOROLA INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封装： | TO-3, 2 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 214K |
| 代理商： | 2N6283 |
2N6282 thru 2N6284 2N6285 thru 2N6287
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t),
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
θJC(t) = r(t) RθJC
R
θJC = 1.09°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3
3.0
30
300
ACTIVE–REGION SAFE OPERATING AREA
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
50
Figure 5. 2N6282, 2N6285
20
2.0
0.05
50
100
TJ = 200°C
0.2
5.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
dc
2.0
5.0
20
5.0 ms
1.0 ms
0.5 ms
10
50
Figure 6. 2N6283, 2N6286
20
2.0
0.05
50
100
0.2
5.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0
5.0
20
10
50
Figure 7. 2N6284, 2N6287
20
2.0
0.05
50
100
0.2
5.0
0.5
I C
,COLLECT
OR
CURRENT
(AMP)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0
5.0
20
10
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
TJ = 200°C
dc
5.0 ms
1.0 ms
0.5 ms
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
SINGLE PULSE
TJ = 200°C
dc
5.0 ms
1.0 ms
0.5 ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 200_C. TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
10,000
1.0
Figure 8. Small–Signal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0 10
20
50 100
200
1000
500
100
5000
h
FE
,SMALL–SIGNAL
CURRENT
GAIN
20
200
500
2000
1000
50
TJ = 25°C
VCE = 3.0 Vdc
IC = 10 A
1000
0.1
Figure 9. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
2.0
5.0
20
100
10
C,
CAP
ACIT
ANCE
(PF)
500
300
200
Cib
Cob
50
0.2
0.5
2N6282/84 (NPN)
2N6285/87 (PNP)
TJ = 25°C
700
2N6282/84 (NPN)
2N6285/87 (PNP)
相关PDF资料 |
PDF描述 |
|---|---|
| 2N6284 | 20 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 2N6301 | 8 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-257 |
| 2N6313 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-66 |
| 2N6316 | 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6323 | 30 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6284 | 功能描述:达林顿晶体管 NPN Darlington Sw RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6284/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_08 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Darlington Complementary Silicon Power Transistors |
| 2N6284_09 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:Complementary power Darlington transistors |
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