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参数资料
| 型号： | 2N6427D26Z |
| 厂商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件页数： | 3/10页 |
| 文件大小： | 706K |
| 代理商： | 2N6427D26Z |
3
2N6427
/
MMBT6427
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 10 mA, IB = 040V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10
A, I
C = 0
12
V
ICEO
Collector Cutoff Current
VCE = 25 V, IB = 0
1.0
A
ICBO
Collector Cutoff Current
VCB = 30 V, IE = 0
50
nA
IEBO
Emitter Cutoff Current
VEB = 10 V, IC = 0
50
nA
SMALL SIGNAL CHARACTERISTICS
Cobo
Output Capacitance
VCB = 10 V, IE = 0,
f = 1.0 MHz
7.0
pF
Cibo
Input Capcitance
VBE = 1.0 V, IC = 0,
f = 1.0 MHz
15
pF
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
hFE
DC Current Gain*
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
IC = 500 mA, VCE = 5.0 V
10,000
20,000
14,000
100,000
200,000
140,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
1.2
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 500 mA, IB = 0.5 mA
2.0
V
VBE(on)
Base-Emitter On Voltage
IC = 50 mA, VCE = 5.0 mA
1.75
V
NPN Darlington Transistor
(continued)
Symbol
Parameter
Test Conditions
Min
Max
Units
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2N6427G | 功能描述:达林顿晶体管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6427RLRA | 功能描述:达林顿晶体管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6427RLRAG | 功能描述:达林顿晶体管 500mA 50V NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| 2N6428 | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
| 2N6428A | 制造商:SAMSUNG 制造商全称:Samsung semiconductor 功能描述:NPN EPITAXIAL SILICON TRANSISTOR |
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